The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy View Full Text


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Article Info

DATE

2011-10

AUTHORS

S. B. Erenburg, S. V. Trubina, N. V. Bausk, A. I. Nikiforov, A. V. Dvurechenskii, V. G. Mansurov, K. S. Zhuravlev, S. G. Nikitenko

ABSTRACT

The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated by EXAFS spectroscopy. The effect of the effective thicknesses of Si (or AlN) barrier layers, number of Ge (or GaN) layers in a sandwich, and annealing temperature on the size and shape of Ge (or GaN) clusters, interfacial diffusion in these systems, and formation of three-dimensional ordered ensembles of QDs has been established. More... »

PAGES

856

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451011090084

DOI

http://dx.doi.org/10.1134/s1027451011090084

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046067392


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