Investigation of 4H-SiC epitaxial layers implanted by Al ions View Full Text


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Article Info

DATE

2009-06

AUTHORS

E. V. Kolesnikova, E. V. Kalinina, A. A. Sitnikova, M. V. Zamoryanskaya

ABSTRACT

4H-SiC epitaxial layers 26 μm thick with Nd−Na = 1 × 1015 cm−3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 1016 cm−2. To produce the p+−n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure. More... »

PAGES

411-414

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451009030136

DOI

http://dx.doi.org/10.1134/s1027451009030136

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026984960


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kolesnikova", 
        "givenName": "E. V.", 
        "id": "sg:person.015736326723.69", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015736326723.69"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalinina", 
        "givenName": "E. V.", 
        "id": "sg:person.011173133637.63", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011173133637.63"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sitnikova", 
        "givenName": "A. A.", 
        "id": "sg:person.015133024650.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zamoryanskaya", 
        "givenName": "M. V.", 
        "id": "sg:person.012605532027.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012605532027.43"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/pssa.2210580242", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014288709"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.4.1843", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060550535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.4.1843", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060550535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.4028/www.scientific.net/msf.389-393.835", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1072113423"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.4028/www.scientific.net/msf.433-436.637", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1072115855"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2009-06", 
    "datePublishedReg": "2009-06-01", 
    "description": "4H-SiC epitaxial layers 26 \u03bcm thick with Nd\u2212Na = 1 \u00d7 1015 cm\u22123 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 \u00d7 1016 cm\u22122. To produce the p+\u2212n junction, a rapid thermal annealing for 15 s at 1700\u00b0C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 \u03bcm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1027451009030136", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136831", 
        "issn": [
          "1027-4510", 
          "1819-7094"
        ], 
        "name": "Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "3"
      }
    ], 
    "name": "Investigation of 4H-SiC epitaxial layers implanted by Al ions", 
    "pagination": "411-414", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "808cf4659dd9487a946f1d39c85a90a903ab877b499e6e9f44a574c79d1a5de7"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1027451009030136"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1026984960"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1027451009030136", 
      "https://app.dimensions.ai/details/publication/pub.1026984960"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T21:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8687_00000505.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/S1027451009030136"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

94 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1027451009030136 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N7098f54a93a34e9eb4060becee7f6d6c
4 schema:citation https://doi.org/10.1002/pssa.2210580242
5 https://doi.org/10.1103/physrevb.4.1843
6 https://doi.org/10.4028/www.scientific.net/msf.389-393.835
7 https://doi.org/10.4028/www.scientific.net/msf.433-436.637
8 schema:datePublished 2009-06
9 schema:datePublishedReg 2009-06-01
10 schema:description 4H-SiC epitaxial layers 26 μm thick with Nd−Na = 1 × 1015 cm−3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 1016 cm−2. To produce the p+−n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf Nbff989f2da5547e492900ee3dc9484f0
15 Ne699bc11fe784844aa2c42900262edbd
16 sg:journal.1136831
17 schema:name Investigation of 4H-SiC epitaxial layers implanted by Al ions
18 schema:pagination 411-414
19 schema:productId N6b9657e4b7c3421c94f321eb473e975a
20 Nbb1a155fe3754a16b2c36bd75b5e318c
21 Nd2c42de506a44e23aeddaa96ce624326
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026984960
23 https://doi.org/10.1134/s1027451009030136
24 schema:sdDatePublished 2019-04-10T21:35
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher Ne3f2deb63c1b4b36871a608e8213cfce
27 schema:url http://link.springer.com/10.1134/S1027451009030136
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N0e700f81c0004af49a252a803f216eba rdf:first sg:person.015133024650.23
32 rdf:rest N9fc30118302142e0b7eb4fc319017420
33 N1e5fec629e124aad9be70e80fc789958 rdf:first sg:person.011173133637.63
34 rdf:rest N0e700f81c0004af49a252a803f216eba
35 N6b9657e4b7c3421c94f321eb473e975a schema:name readcube_id
36 schema:value 808cf4659dd9487a946f1d39c85a90a903ab877b499e6e9f44a574c79d1a5de7
37 rdf:type schema:PropertyValue
38 N7098f54a93a34e9eb4060becee7f6d6c rdf:first sg:person.015736326723.69
39 rdf:rest N1e5fec629e124aad9be70e80fc789958
40 N9fc30118302142e0b7eb4fc319017420 rdf:first sg:person.012605532027.43
41 rdf:rest rdf:nil
42 Nbb1a155fe3754a16b2c36bd75b5e318c schema:name doi
43 schema:value 10.1134/s1027451009030136
44 rdf:type schema:PropertyValue
45 Nbff989f2da5547e492900ee3dc9484f0 schema:issueNumber 3
46 rdf:type schema:PublicationIssue
47 Nd2c42de506a44e23aeddaa96ce624326 schema:name dimensions_id
48 schema:value pub.1026984960
49 rdf:type schema:PropertyValue
50 Ne3f2deb63c1b4b36871a608e8213cfce schema:name Springer Nature - SN SciGraph project
51 rdf:type schema:Organization
52 Ne699bc11fe784844aa2c42900262edbd schema:volumeNumber 3
53 rdf:type schema:PublicationVolume
54 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
55 schema:name Engineering
56 rdf:type schema:DefinedTerm
57 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
58 schema:name Materials Engineering
59 rdf:type schema:DefinedTerm
60 sg:journal.1136831 schema:issn 1027-4510
61 1819-7094
62 schema:name Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
63 rdf:type schema:Periodical
64 sg:person.011173133637.63 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
65 schema:familyName Kalinina
66 schema:givenName E. V.
67 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011173133637.63
68 rdf:type schema:Person
69 sg:person.012605532027.43 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
70 schema:familyName Zamoryanskaya
71 schema:givenName M. V.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012605532027.43
73 rdf:type schema:Person
74 sg:person.015133024650.23 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
75 schema:familyName Sitnikova
76 schema:givenName A. A.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23
78 rdf:type schema:Person
79 sg:person.015736326723.69 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
80 schema:familyName Kolesnikova
81 schema:givenName E. V.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015736326723.69
83 rdf:type schema:Person
84 https://doi.org/10.1002/pssa.2210580242 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014288709
85 rdf:type schema:CreativeWork
86 https://doi.org/10.1103/physrevb.4.1843 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060550535
87 rdf:type schema:CreativeWork
88 https://doi.org/10.4028/www.scientific.net/msf.389-393.835 schema:sameAs https://app.dimensions.ai/details/publication/pub.1072113423
89 rdf:type schema:CreativeWork
90 https://doi.org/10.4028/www.scientific.net/msf.433-436.637 schema:sameAs https://app.dimensions.ai/details/publication/pub.1072115855
91 rdf:type schema:CreativeWork
92 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
93 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
94 rdf:type schema:Organization
 




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