Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-04

AUTHORS

T. V. Vakhnii, G. A. Vershinin, I. A. Bozhko, I. A. Kurzina, Yu. P. Sharkeev, T. S. Grekova

ABSTRACT

A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam. More... »

PAGES

301-304

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451008020262

DOI

http://dx.doi.org/10.1134/s1027451008020262

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1005565233


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