TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

A. A. Sitnikova, S. G. Konnikov, D. A. Kirilenko, M. G. Mynbaeva, M. A. Odnoblyudov, V. E. Bugrov, T. Lang

ABSTRACT

The structure of gallium nitride epitaxial layers grown on patterned substrates was studied by transmission electron microscopy. The engraving of a substrate surface with pits or pyramids undoubtedly leads to structural improvement. The best results are obtained at a pattern density of about 107 cm−2.

PAGES

269-272

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s102745100703007x

DOI

http://dx.doi.org/10.1134/s102745100703007x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043917710


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