Fullerenes as passivating agents of the surfaces of semiconductor photo- and light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-07-08

AUTHORS

V. V. Sherstnev, N. A. Charykov, K. N. Semenov, V. A. Keskinov

ABSTRACT

A new pathway for passivation of the surface of infrared photodiodes and light-emitting diodes operating at room temperature in the spectral range of 2–5 μm by individual fullerene C70 is proposed and its characteristics are studied. It is determined that during the passivation of photodiodes, dark current falls by 40% and resistance at zero bias increases by 24%; for light-emitting diodes, leaks fall by ∼20%, and resistance at zero bias increases by 45% and the intensity of emission of light-emitting diodes increases by ∼18% after the application of fullerene C70. More... »

PAGES

1411-1415

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0036024411080310

DOI

http://dx.doi.org/10.1134/s0036024411080310

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028382865


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