Crystallization of Mg(Fe0.8Ga0.2)2O4-δ films on silicon with SiO2 and TiO2 buffer layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-07

AUTHORS

M. N. Smirnova, A. A. Geras’kin, A. I. Stognii, O. L. Golikova, A. V. Bespalov, A. V. Trukhanov, M. A. Kop’eva, E. N. Beresnev, V. A. Ketsko

ABSTRACT

The results of analysis of conceivable interactions between film and substrate materials during crystallization of Mg(Fe0.8Ga0.2)2O4-δ films with SiO2 and TiO2 buffer layers on silicon are reported. The calculated data are compared with the physicochemical parameters of Mg(Fe0.8Ga0.2)2O4-δ/Si, Mg(Fe0.8Ga0.2)2O4-δ/TiO2/Si, and Mg(Fe0.8Ga0.2)2O4-δ/SiO2/Si film heterostructures.

PAGES

778-782

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0036023614070213

DOI

http://dx.doi.org/10.1134/s0036023614070213

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004890087


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