Effect of synthesis conditions on the structure and properties of new SiCxNyMz materials for spintronics View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-12

AUTHORS

N. I. Fainer, R. V. Pushkarev, V. A. Shestakov, A. K. Gutakovskii

ABSTRACT

To produce novel thin-film spintronic materials based on a thermodynamic simulation, condensed phases with a complex composition are deposited in Si–С–N–H–M systems (M = Fe, Co, Ni) in a wide temperature range of 500-1300 K. As a result of the simulation CVD diagrams of Fe–Si–C–N–H(He), Co–Si–C–N–H(He), and Ni–Si–C–N–H(He) systems are obtained which enable the optimization of the synthesis process for film materials such as SiCxNyFez, SiCxNyCoz, and SiCxNyNiz. SiCxNyFez films are experimentally deposited from a gas mixture containing ferrocene (C5H5)2Fe, organosilicon compound 1,1,1,3,3,3-hexamethyldisilazane HNSi2(CH3)6 (HMDS) under reduced pressure in the temperature range 1073-1273 K. The dependence of the physicochemical and functional properties of SiCxNyFez films on the synthesis conditions is found by a comples of modern research techniques such as IR and Raman spectroscopy, EDS, XPS, SEM, HREM, and synchrotron radiation powder XRD (SR XRD). By the Faraday method and electron paramagnetic resonance (EPR) the magnetic properties of the films are analyzed. It is shown that at a synthesis temperature of 1123 K the films are paramagnetic, and at a higher deposition temperature of 1273 K they are ferromagnetic. More... »

PAGES

1493-1502

References to SciGraph publications

  • 2010-12. EPR/FMR Investigation of Mn-Doped SiCN Ceramics in APPLIED MAGNETIC RESONANCE
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s0022476617080030

    DOI

    http://dx.doi.org/10.1134/s0022476617080030

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1100771952


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Materials Engineering", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Nikolaev Institute of Inorganic Chemistry", 
              "id": "https://www.grid.ac/institutes/grid.425759.8", 
              "name": [
                "Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Fainer", 
            "givenName": "N. I.", 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Nikolaev Institute of Inorganic Chemistry", 
              "id": "https://www.grid.ac/institutes/grid.425759.8", 
              "name": [
                "Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Pushkarev", 
            "givenName": "R. V.", 
            "id": "sg:person.015046465021.57", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015046465021.57"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Nikolaev Institute of Inorganic Chemistry", 
              "id": "https://www.grid.ac/institutes/grid.425759.8", 
              "name": [
                "Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Shestakov", 
            "givenName": "V. A.", 
            "id": "sg:person.015442744167.55", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015442744167.55"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Institute of Semiconductor Physics", 
              "id": "https://www.grid.ac/institutes/grid.450314.7", 
              "name": [
                "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Gutakovskii", 
            "givenName": "A. K.", 
            "id": "sg:person.01135332154.48", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135332154.48"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1007/s00723-010-0163-7", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1000996591", 
              "https://doi.org/10.1007/s00723-010-0163-7"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1007/s00723-010-0163-7", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1000996591", 
              "https://doi.org/10.1007/s00723-010-0163-7"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1002/sia.1984", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1007692397"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/s0168-9002(01)01043-9", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1013492534"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/s0040-6090(96)09071-2", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1023335346"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.actamat.2017.01.027", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1032629882"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.apsusc.2007.09.063", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1047614516"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1016/j.actamat.2012.05.031", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1048948269"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1149/2.0201501jss", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1051253243"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.1674108", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057750567"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2017-12", 
        "datePublishedReg": "2017-12-01", 
        "description": "To produce novel thin-film spintronic materials based on a thermodynamic simulation, condensed phases with a complex composition are deposited in Si\u2013\u0421\u2013N\u2013H\u2013M systems (M = Fe, Co, Ni) in a wide temperature range of 500-1300 K. As a result of the simulation CVD diagrams of Fe\u2013Si\u2013C\u2013N\u2013H(He), Co\u2013Si\u2013C\u2013N\u2013H(He), and Ni\u2013Si\u2013C\u2013N\u2013H(He) systems are obtained which enable the optimization of the synthesis process for film materials such as SiCxNyFez, SiCxNyCoz, and SiCxNyNiz. SiCxNyFez films are experimentally deposited from a gas mixture containing ferrocene (C5H5)2Fe, organosilicon compound 1,1,1,3,3,3-hexamethyldisilazane HNSi2(CH3)6 (HMDS) under reduced pressure in the temperature range 1073-1273 K. The dependence of the physicochemical and functional properties of SiCxNyFez films on the synthesis conditions is found by a comples of modern research techniques such as IR and Raman spectroscopy, EDS, XPS, SEM, HREM, and synchrotron radiation powder XRD (SR XRD). By the Faraday method and electron paramagnetic resonance (EPR) the magnetic properties of the films are analyzed. It is shown that at a synthesis temperature of 1123 K the films are paramagnetic, and at a higher deposition temperature of 1273 K they are ferromagnetic.", 
        "genre": "research_article", 
        "id": "sg:pub.10.1134/s0022476617080030", 
        "inLanguage": [
          "en"
        ], 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1135923", 
            "issn": [
              "0022-4766", 
              "2542-0976"
            ], 
            "name": "Journal of Structural Chemistry", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "8", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "58"
          }
        ], 
        "name": "Effect of synthesis conditions on the structure and properties of new SiCxNyMz materials for spintronics", 
        "pagination": "1493-1502", 
        "productId": [
          {
            "name": "readcube_id", 
            "type": "PropertyValue", 
            "value": [
              "81fd9b5720eea7552a27bc0f7d967998bbf513a578bb30d36f7686bb28fbb776"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1134/s0022476617080030"
            ]
          }, 
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1100771952"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1134/s0022476617080030", 
          "https://app.dimensions.ai/details/publication/pub.1100771952"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2019-04-11T00:31", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000603.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "http://link.springer.com/10.1134/S0022476617080030"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s0022476617080030'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s0022476617080030'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s0022476617080030'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s0022476617080030'


     

    This table displays all metadata directly associated to this object as RDF triples.

    112 TRIPLES      21 PREDICATES      36 URIs      19 LITERALS      7 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1134/s0022476617080030 schema:about anzsrc-for:09
    2 anzsrc-for:0912
    3 schema:author Ncec8633ed0754f7ca6f246a72b7fcd26
    4 schema:citation sg:pub.10.1007/s00723-010-0163-7
    5 https://doi.org/10.1002/sia.1984
    6 https://doi.org/10.1016/j.actamat.2012.05.031
    7 https://doi.org/10.1016/j.actamat.2017.01.027
    8 https://doi.org/10.1016/j.apsusc.2007.09.063
    9 https://doi.org/10.1016/s0040-6090(96)09071-2
    10 https://doi.org/10.1016/s0168-9002(01)01043-9
    11 https://doi.org/10.1063/1.1674108
    12 https://doi.org/10.1149/2.0201501jss
    13 schema:datePublished 2017-12
    14 schema:datePublishedReg 2017-12-01
    15 schema:description To produce novel thin-film spintronic materials based on a thermodynamic simulation, condensed phases with a complex composition are deposited in Si–С–N–H–M systems (M = Fe, Co, Ni) in a wide temperature range of 500-1300 K. As a result of the simulation CVD diagrams of Fe–Si–C–N–H(He), Co–Si–C–N–H(He), and Ni–Si–C–N–H(He) systems are obtained which enable the optimization of the synthesis process for film materials such as SiCxNyFez, SiCxNyCoz, and SiCxNyNiz. SiCxNyFez films are experimentally deposited from a gas mixture containing ferrocene (C5H5)2Fe, organosilicon compound 1,1,1,3,3,3-hexamethyldisilazane HNSi2(CH3)6 (HMDS) under reduced pressure in the temperature range 1073-1273 K. The dependence of the physicochemical and functional properties of SiCxNyFez films on the synthesis conditions is found by a comples of modern research techniques such as IR and Raman spectroscopy, EDS, XPS, SEM, HREM, and synchrotron radiation powder XRD (SR XRD). By the Faraday method and electron paramagnetic resonance (EPR) the magnetic properties of the films are analyzed. It is shown that at a synthesis temperature of 1123 K the films are paramagnetic, and at a higher deposition temperature of 1273 K they are ferromagnetic.
    16 schema:genre research_article
    17 schema:inLanguage en
    18 schema:isAccessibleForFree false
    19 schema:isPartOf N2e2107eb214d405c8885945d6b6b0a1a
    20 N462a38846c594b33a49852f7f2fd2fed
    21 sg:journal.1135923
    22 schema:name Effect of synthesis conditions on the structure and properties of new SiCxNyMz materials for spintronics
    23 schema:pagination 1493-1502
    24 schema:productId N2a8e3d91ea294aa3993928c9eba93247
    25 Nd94190327c88432aa73bf95e4e30a1f4
    26 Ned36b04bc2e147e8adcf53d0fdd6a7bf
    27 schema:sameAs https://app.dimensions.ai/details/publication/pub.1100771952
    28 https://doi.org/10.1134/s0022476617080030
    29 schema:sdDatePublished 2019-04-11T00:31
    30 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    31 schema:sdPublisher Ne1aeb57174e04ae89e08d7a542290be2
    32 schema:url http://link.springer.com/10.1134/S0022476617080030
    33 sgo:license sg:explorer/license/
    34 sgo:sdDataset articles
    35 rdf:type schema:ScholarlyArticle
    36 N2a8e3d91ea294aa3993928c9eba93247 schema:name readcube_id
    37 schema:value 81fd9b5720eea7552a27bc0f7d967998bbf513a578bb30d36f7686bb28fbb776
    38 rdf:type schema:PropertyValue
    39 N2e2107eb214d405c8885945d6b6b0a1a schema:volumeNumber 58
    40 rdf:type schema:PublicationVolume
    41 N3bdd49d83e774511af2d849d798cd899 rdf:first sg:person.015046465021.57
    42 rdf:rest Ne8cc9ad79fbb4c27b08ff1c8c24f703e
    43 N462a38846c594b33a49852f7f2fd2fed schema:issueNumber 8
    44 rdf:type schema:PublicationIssue
    45 N7128743af2ef47c995d774bb9ccb1fd0 rdf:first sg:person.01135332154.48
    46 rdf:rest rdf:nil
    47 Ncec8633ed0754f7ca6f246a72b7fcd26 rdf:first Nef857a9215c04c2eb54cb69af86ed4c1
    48 rdf:rest N3bdd49d83e774511af2d849d798cd899
    49 Nd94190327c88432aa73bf95e4e30a1f4 schema:name dimensions_id
    50 schema:value pub.1100771952
    51 rdf:type schema:PropertyValue
    52 Ne1aeb57174e04ae89e08d7a542290be2 schema:name Springer Nature - SN SciGraph project
    53 rdf:type schema:Organization
    54 Ne8cc9ad79fbb4c27b08ff1c8c24f703e rdf:first sg:person.015442744167.55
    55 rdf:rest N7128743af2ef47c995d774bb9ccb1fd0
    56 Ned36b04bc2e147e8adcf53d0fdd6a7bf schema:name doi
    57 schema:value 10.1134/s0022476617080030
    58 rdf:type schema:PropertyValue
    59 Nef857a9215c04c2eb54cb69af86ed4c1 schema:affiliation https://www.grid.ac/institutes/grid.425759.8
    60 schema:familyName Fainer
    61 schema:givenName N. I.
    62 rdf:type schema:Person
    63 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
    64 schema:name Engineering
    65 rdf:type schema:DefinedTerm
    66 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
    67 schema:name Materials Engineering
    68 rdf:type schema:DefinedTerm
    69 sg:journal.1135923 schema:issn 0022-4766
    70 2542-0976
    71 schema:name Journal of Structural Chemistry
    72 rdf:type schema:Periodical
    73 sg:person.01135332154.48 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
    74 schema:familyName Gutakovskii
    75 schema:givenName A. K.
    76 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135332154.48
    77 rdf:type schema:Person
    78 sg:person.015046465021.57 schema:affiliation https://www.grid.ac/institutes/grid.425759.8
    79 schema:familyName Pushkarev
    80 schema:givenName R. V.
    81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015046465021.57
    82 rdf:type schema:Person
    83 sg:person.015442744167.55 schema:affiliation https://www.grid.ac/institutes/grid.425759.8
    84 schema:familyName Shestakov
    85 schema:givenName V. A.
    86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015442744167.55
    87 rdf:type schema:Person
    88 sg:pub.10.1007/s00723-010-0163-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000996591
    89 https://doi.org/10.1007/s00723-010-0163-7
    90 rdf:type schema:CreativeWork
    91 https://doi.org/10.1002/sia.1984 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007692397
    92 rdf:type schema:CreativeWork
    93 https://doi.org/10.1016/j.actamat.2012.05.031 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048948269
    94 rdf:type schema:CreativeWork
    95 https://doi.org/10.1016/j.actamat.2017.01.027 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032629882
    96 rdf:type schema:CreativeWork
    97 https://doi.org/10.1016/j.apsusc.2007.09.063 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047614516
    98 rdf:type schema:CreativeWork
    99 https://doi.org/10.1016/s0040-6090(96)09071-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023335346
    100 rdf:type schema:CreativeWork
    101 https://doi.org/10.1016/s0168-9002(01)01043-9 schema:sameAs https://app.dimensions.ai/details/publication/pub.1013492534
    102 rdf:type schema:CreativeWork
    103 https://doi.org/10.1063/1.1674108 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057750567
    104 rdf:type schema:CreativeWork
    105 https://doi.org/10.1149/2.0201501jss schema:sameAs https://app.dimensions.ai/details/publication/pub.1051253243
    106 rdf:type schema:CreativeWork
    107 https://www.grid.ac/institutes/grid.425759.8 schema:alternateName Nikolaev Institute of Inorganic Chemistry
    108 schema:name Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
    109 rdf:type schema:Organization
    110 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
    111 schema:name Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
    112 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...