Ontology type: schema:ScholarlyArticle
2021-04
AUTHORSE. A. Evropeitsev, Yu. M. Serov, D. V. Nechaev, V. N. Jmerik, T. V. Shubina, A. A. Toropov
ABSTRACTThe decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation decay curves are theoretically simulated within a three-level model. The relaxation of dipole-allowed “bright” excitons spatially confined in GaN monolayers is determined as exciton relaxation with a characteristic time of ~3 ps, which is accompanied by spin flip and by transformation to dipole-forbidden “dark” excitons whose levels lie by ~60 meV below in energy. It has been shown that exciton states at temperatures above 50 K are two-dimensional. More... »
PAGES504-509
http://scigraph.springernature.com/pub.10.1134/s0021364021080038
DOIhttp://dx.doi.org/10.1134/s0021364021080038
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