Photothermal Ionization Spectroscopy of Mercury Vacancies in HgCdTe Epitaxial Films View Full Text


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Article Info

DATE

2021-03

AUTHORS

D. V. Kozlov, T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, A. A. Razova, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov

ABSTRACT

The terahertz photoconductivity of narrow-gap Hg1 –xCdxTe alloys that originates from shallow double acceptors formed by mercury vacancies is investigated. The discrete spectrum of these acceptors and the matrix elements of the optical transitions from the ground to the excited states are calculated within a model taking into account the contribution from the conduction band and a model central-cell potential. Excited states with low ionization energies that are formed mainly by the states of light holes and are characterized by large matrix elements of optical transitions connecting them to the ground state are found. It is shown that the observed lines in the photoconductivity spectra are caused by transitions to these states for both neutral and singly ionized acceptors, rather than transitions to the valence-band continuum states. More... »

PAGES

402-408

References to SciGraph publications

  • 2019-09-03. Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature in SEMICONDUCTORS
  • 2014-02-14. Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2020-05. Probing States of a Double Acceptor in CdHgTe Heterostructures via Optical Gating in JETP LETTERS
  • 2004-10. Effect of low-temperature annealing on electrical properties of n-HgCdTe in SEMICONDUCTORS
  • 2015-12-10. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures in SEMICONDUCTORS
  • 2015-03-04. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2019-09-03. Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission in SEMICONDUCTORS
  • 2009-09. Fano resonances in the impurity photocurrent spectra of GaAs samples and an InGaAs/GaAsP quantum-well heterostructure doped with shallow acceptors in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2012-11-07. Features of impurity-photoconductivity relaxation in boron-doped silicon in SEMICONDUCTORS
  • 1957. Quantum Mechanics of One- and Two-Electron Atoms in NONE
  • 2018-10-18. Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers in SEMICONDUCTORS
  • 2005-01. Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures in SEMICONDUCTORS
  • 2018-11-07. Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures in SEMICONDUCTORS
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    http://scigraph.springernature.com/pub.10.1134/s0021364021060072

    DOI

    http://dx.doi.org/10.1134/s0021364021060072

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1138584402


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