Ontology type: schema:ScholarlyArticle
2006-04
AUTHORSA. A. Maksimov, I. I. Tartakovskiĭ, D. R. Yakovlev, M. Bayer, A. Waag
ABSTRACTRelaxation of photoexcited carriers in the course of the formation of spatially separated layers of electrons and holes in type-II ZnSe/BeTe heterostructures has been studied based on a high time resolution investigation of fast luminescence kinetics. The hole escape times τ from the ZnSe layer have been measured in structures with different ZnSe layer thicknesses (τ = 2.5, 7.5, and 23 ps for thicknesses d = 10, 15, and 20 nm, respectively). It is shown that the increase in the time τ can be explained by the fact that the escape rate of photoexcited holes from the lowest above-barrier level in the ZnSe layer into the BeTe layer decreases as the thickness of the ZnSe layer increases. More... »
PAGES141-145
http://scigraph.springernature.com/pub.10.1134/s0021364006040035
DOIhttp://dx.doi.org/10.1134/s0021364006040035
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