Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures View Full Text


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Article Info

DATE

2006-04

AUTHORS

A. A. Maksimov, I. I. Tartakovskiĭ, D. R. Yakovlev, M. Bayer, A. Waag

ABSTRACT

Relaxation of photoexcited carriers in the course of the formation of spatially separated layers of electrons and holes in type-II ZnSe/BeTe heterostructures has been studied based on a high time resolution investigation of fast luminescence kinetics. The hole escape times τ from the ZnSe layer have been measured in structures with different ZnSe layer thicknesses (τ = 2.5, 7.5, and 23 ps for thicknesses d = 10, 15, and 20 nm, respectively). It is shown that the increase in the time τ can be explained by the fact that the escape rate of photoexcited holes from the lowest above-barrier level in the ZnSe layer into the BeTe layer decreases as the thickness of the ZnSe layer increases. More... »

PAGES

141-145

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0021364006040035

DOI

http://dx.doi.org/10.1134/s0021364006040035

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008659231


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