A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-11

AUTHORS

L. Hrubčín, Yu. B. Gurov, B. Zaťko, O. M. Ivanov, S. V. Mitrofanov, S. V. Rozov, V. G. Sandukovsky, V. A. Semin, V. A. Skuratov

ABSTRACT

The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector. More... »

PAGES

769-771

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0020441218060192

DOI

http://dx.doi.org/10.1134/s0020441218060192

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110402035


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