A Method for Reducing the Threshold Dose of Irradiation with Hydrogen Ions for Forming Blisters in Silicon View Full Text


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Article Info

DATE

2018-03

AUTHORS

V. F. Reutov, S. N. Dmitriev, A. G. Zaluzhnyi

ABSTRACT

We consider the conditions for reducing the threshold dose of radiation-gas splitting of a silicon single crystal by using a fixed-energy two-stage irradiation with hydrogen ions in a single production cycle. It has been experimentally established that a well-developed blister structure is formed in a sample in the mode of its two-stage irradiation with hydrogen ions with E = 12.5 keV and a dose of 0.5 × 1016 cm–2 at a normal angle of incidence at the first stage and, then, with a dose of 1.0 × 1016 cm−2 at an angle of 32° at the second stage (the total dose is 1.5 × 1016 cm–2). This structure is similar to the structure in a sample irradiated in the mode of single-stage irradiation to a dose of 5 × 1016 cm–2. This fact is the indication that the conditions for more than a threefold decrease in the threshold for the formation of hydrogen blisters in silicon upon twostage irradiation with monoenergetic hydrogen ions in a single production cycle. More... »

PAGES

313-316

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0020441218020197

DOI

http://dx.doi.org/10.1134/s0020441218020197

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103399860


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