Growth of Y3Fe5O12 films on Si with AlOx and SiO2 buffer layers by ion beam sputtering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-10

AUTHORS

A. I. Stognij, N. N. Novitskii, O. L. Golikova, A. V. Bespalov, R. Gieniusz, A. Maziewski, A. Stupakiewicz, M. N. Smirnova, V. A. Ketsko

ABSTRACT

Amorphous yttrium iron garnet films ranging in thickness from 100 to 600 nm have been produced on single-crystal silicon substrates by sputtering a polycrystalline target with the composition Y3Fe5O12 (yttrium iron garnet) by a mixture of argon and oxygen ions. Before film growth, AlOx or SiO2 buffer layers up to 0.8 μm in thickness were grown on the Si surface. The heterostructures were crystallized by annealing in air at a temperature of 950°C for 30 min. The properties of the films were studied by magneto-optical techniques, using Kerr effect and ferromagnetic resonance measurements. The Gilbert damping parameter reached 2.8 × 10–3 and the effective planar magnetic anisotropy field was independent of the nature of the buffer layer. This suggests that the thin-film heterostructures obtained in this study are potentially attractive for use in spin-wave semiconductor devices. More... »

PAGES

1069-1074

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0020168517100156

DOI

http://dx.doi.org/10.1134/s0020168517100156

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1091594122


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