Fabrication of a plane-parallel interface in Ni/PbZr0.2Ti0.8O3 heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-08

AUTHORS

A. I. Stognij, N. N. Novitskii, S. A. Sharko, A. V. Bespalov, O. L. Golikova, V. A. Ketsko

ABSTRACT

A process has been proposed for producing a plane-parallel ferromagnetic/ferroelectric interface, which ensures a reproducible magnetoelectric performance of Ni/PbZr0.2Ti0.8O3 (PZT) heterostructures. Its principle is to smooth the initial surface profile of the PZT ceramic substrate to a submicron level by sequential deposition/sputtering of three layers 0.2, 0.1, and 0.05 μm in thickness through ion beam sputtering of a target having the same composition as the substrate, followed by the growth of a nickel film on the smoothed surface. This allows one to preclude film bulging and spalling and ensures high quality of the interface. More... »

PAGES

832-835

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0020168512080146

DOI

http://dx.doi.org/10.1134/s0020168512080146

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050432382


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