The production and structure of submicrometer Eu0.75Fe0.25O films on InSb, Si, and GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-03

AUTHORS

A. S. Borukhovich, A. I. Galyas, O. F. Demidenko, V. Dyakonov, V. A. Ketsko, N. I. Ignat’eva, N. N. Novitskii, A. I. Stognij, H. Szymczak, K. I. Yanushkevich

ABSTRACT

The conditions for fabrication and the crystal structure of the up-to-350-nm-thick Eu0.75Fe0.25O layers formed on InSb, Si, and GaAs substrates are studied. For the first time, 100–200 nm films with morphological surface inhomogeneities not exceeding 10 nm in size are produced by flash evaporation of targets close in composition to Eu0.75Fe0.25O onto InSb(001) substrates. The films exhibit ferromagnetic properties in combination with semiconductor properties at room temperatures. More... »

PAGES

254-257

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s0020168509030066

DOI

http://dx.doi.org/10.1134/s0020168509030066

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019721427


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