Lateral localization of optical phonons in GaAs quantum islands View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-07

AUTHORS

M. D. Efremov, V. A. Volodin, V. V. Preobrazhenskii, B. R. Semyagin, V. A. Sachkov, V. V. Bolotov, E. A. Galaktionov, A. V. Kretinin

ABSTRACT

Lateral localization of phonons in GaAs islands formed on the (100) surface under conditions of (2 × 4) structural reconstruction is detected by means of Raman scattering. The triplet structure of the peak corresponding to laterally localized phonons is detected in the Raman scattering spectra of a GaAs0.6/AlAs5 sublattice grown by molecular-beam epitaxy. The distribution of islands over different configurations is determined by comparing the theoretical Raman scattering spectra, calculated in the Vol’kenshten bond polarizability approximation, with the experimental spectra. The atomic configuration of the islands is identical to the results obtained previously by scanning tunneling microscopy. According to the calculation, 70% of the islands contain fewer than 18 Ga atoms, and lateral localization occurs with AlAs barrier thickness of 2 or more monolayers. More... »

PAGES

75-81

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.568133

DOI

http://dx.doi.org/10.1134/1.568133

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047630515


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