Above-barrier excitons: First magnetooptic investigation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

1999-05

AUTHORS

M. R. Vladimirova, A. V. Kavokin, M. A. Kaliteevskii, S. I. Kokhanovskii, M. É. Sasin, R. P. Seisyan

ABSTRACT

An above-barrier localized excitonic state in a Bragg confining semiconductor superstructure based on an (In, Ga)As/GaAs heterosystem is observed experimentally. A sharp excitonic resonance corresponding to the interference mechanism of localization is observed in the absorption spectrum of this structure at 1.548 eV, i.e., 33 meV above the energy of a bulk exciton in GaAs. The oscillator strength of the above-barrier exciton is twice that of the main excitonic state in the system, and the above-barrier exciton gives rise to sharp Landau oscillations in the magnetoabsorption spectra. More... »

PAGES

779-784

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.568090

DOI

http://dx.doi.org/10.1134/1.568090

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049309556


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