Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-12

AUTHORS

P. G. Baranov, B. Ya. Ber, O. N. Godisov, I. V. Il’in, A. N. Ionov, E. N. Mokhov, M. V. Muzafarova, A. K. Kaliteevskii, M. A. Kaliteevskii, P. S. Kop’ev

ABSTRACT

The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified content of the 29Si and 13C isotopes having a nonzero nuclear magnetic moment. As follows from the present EPR and available ENDOR data, the distribution of donor electrons in SiC depends substantially on the polytype and position in the lattice; indeed, in 4H-SiC, the unpaired electrons occupy primarily the Si s and p orbitals, whereas in 6H-SiC these electrons reside primarily in the s orbitals of C. The electron distributions for the N donor in the hexagonal position, which has a shallow level close to that obtained for this material in the effective-mass approximation, and for the donor occupying the quasi-cubic position differ substantially. The EPR spectrum of N in quasi-cubic positions was observed to have a hyperfine structure originating from a comparatively strong coupling with the first two coordination shells of Si and C, which were unambiguously identified. The effective-mass approximation breaks down close to the N donor occupying the quasi-cubic position, and the donor structure and the donor electron distribution become less symmetric. In silicon, reduction of the 29Si content brought about a substantial narrowing of the EPR line of the shallow P and As donors and an increase in the EPR signal intensity, as well as a noticeable increase in the spin-lattice relaxation time T1. This offers the possibility of selectively studying these spectra by optically exciting a region of the crystal in order to shorten T1 and thereby precluding EPR signal saturation only in the illuminated part of the material. This method may be used to advantage in developing materials for quantum computers based on donors in silicon and SiC. More... »

PAGES

2219-2232

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.2142882

DOI

http://dx.doi.org/10.1134/1.2142882

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034152860


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0203", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Classical Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Baranov", 
        "givenName": "P. G.", 
        "id": "sg:person.0726165524.63", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0726165524.63"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Godisov", 
        "givenName": "O. N.", 
        "id": "sg:person.012015450711.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012015450711.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il\u2019in", 
        "givenName": "I. V.", 
        "id": "sg:person.014317537257.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014317537257.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ionov", 
        "givenName": "A. N.", 
        "id": "sg:person.012324031326.80", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012324031326.80"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mokhov", 
        "givenName": "E. N.", 
        "id": "sg:person.016652260422.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016652260422.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Muzafarova", 
        "givenName": "M. V.", 
        "id": "sg:person.014155573051.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014155573051.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kaliteevskii", 
        "givenName": "A. K.", 
        "id": "sg:person.010422507711.64", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010422507711.64"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kaliteevskii", 
        "givenName": "M. A.", 
        "id": "sg:person.014454350336.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014454350336.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kop\u2019ev", 
        "givenName": "P. S.", 
        "id": "sg:person.015440263604.97", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015440263604.97"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-1-4684-0904-8_4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016816187", 
          "https://doi.org/10.1007/978-1-4684-0904-8_4"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2005-12", 
    "datePublishedReg": "2005-12-01", 
    "description": "The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified content of the 29Si and 13C isotopes having a nonzero nuclear magnetic moment. As follows from the present EPR and available ENDOR data, the distribution of donor electrons in SiC depends substantially on the polytype and position in the lattice; indeed, in 4H-SiC, the unpaired electrons occupy primarily the Si s and p orbitals, whereas in 6H-SiC these electrons reside primarily in the s orbitals of C. The electron distributions for the N donor in the hexagonal position, which has a shallow level close to that obtained for this material in the effective-mass approximation, and for the donor occupying the quasi-cubic position differ substantially. The EPR spectrum of N in quasi-cubic positions was observed to have a hyperfine structure originating from a comparatively strong coupling with the first two coordination shells of Si and C, which were unambiguously identified. The effective-mass approximation breaks down close to the N donor occupying the quasi-cubic position, and the donor structure and the donor electron distribution become less symmetric. In silicon, reduction of the 29Si content brought about a substantial narrowing of the EPR line of the shallow P and As donors and an increase in the EPR signal intensity, as well as a noticeable increase in the spin-lattice relaxation time T1. This offers the possibility of selectively studying these spectra by optically exciting a region of the crystal in order to shorten T1 and thereby precluding EPR signal saturation only in the illuminated part of the material. This method may be used to advantage in developing materials for quantum computers based on donors in silicon and SiC.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/1.2142882", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136591", 
        "issn": [
          "0367-3294", 
          "1063-7834"
        ], 
        "name": "Physics of the Solid State", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "47"
      }
    ], 
    "keywords": [
      "effective mass approximation", 
      "wave functions", 
      "unpaired electron wave function", 
      "electron distribution", 
      "acceptor wave functions", 
      "quantum computer", 
      "spin-lattice relaxation time T1", 
      "magnetic moment", 
      "nuclear magnetic moments", 
      "donor electrons", 
      "relaxation time T1", 
      "hexagonal positions", 
      "silicon crystals", 
      "approximation", 
      "time T1", 
      "strong coupling", 
      "present EPR", 
      "Si s", 
      "EPR lines", 
      "electrons", 
      "shallow donors", 
      "hyperfine structure", 
      "silicon", 
      "substantial narrowing", 
      "illuminated part", 
      "signal saturation", 
      "distribution", 
      "lattice", 
      "orbitals", 
      "unpaired electron", 
      "spatial distribution", 
      "coordination shell", 
      "crystals", 
      "ENDOR data", 
      "EPR spectra", 
      "silicon carbide", 
      "EPR signal intensity", 
      "EPR studies", 
      "moment", 
      "function", 
      "SiC crystals", 
      "coupling", 
      "spectra", 
      "structure", 
      "position", 
      "donor structure", 
      "computer", 
      "polytypes", 
      "Si", 
      "order", 
      "saturation", 
      "shell", 
      "materials", 
      "EPR", 
      "SiC.", 
      "possibility", 
      "lines", 
      "SiC", 
      "intensity", 
      "data", 
      "region", 
      "part", 
      "T1", 
      "noticeable increase", 
      "shallow levels", 
      "carbide", 
      "reduction", 
      "increase", 
      "narrowing", 
      "isotopes", 
      "signal intensity", 
      "study", 
      "composition", 
      "levels", 
      "content", 
      "donors", 
      "isotopic composition", 
      "method"
    ], 
    "name": "Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition", 
    "pagination": "2219-2232", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1034152860"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.2142882"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.2142882", 
      "https://app.dimensions.ai/details/publication/pub.1034152860"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:23", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_397.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/1.2142882"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.2142882'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.2142882'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.2142882'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.2142882'


 

This table displays all metadata directly associated to this object as RDF triples.

214 TRIPLES      22 PREDICATES      107 URIs      96 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.2142882 schema:about anzsrc-for:02
2 anzsrc-for:0203
3 anzsrc-for:0204
4 anzsrc-for:0206
5 schema:author Nc2b9608c647b4713afcc05b6d57efc24
6 schema:citation sg:pub.10.1007/978-1-4684-0904-8_4
7 schema:datePublished 2005-12
8 schema:datePublishedReg 2005-12-01
9 schema:description The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified content of the 29Si and 13C isotopes having a nonzero nuclear magnetic moment. As follows from the present EPR and available ENDOR data, the distribution of donor electrons in SiC depends substantially on the polytype and position in the lattice; indeed, in 4H-SiC, the unpaired electrons occupy primarily the Si s and p orbitals, whereas in 6H-SiC these electrons reside primarily in the s orbitals of C. The electron distributions for the N donor in the hexagonal position, which has a shallow level close to that obtained for this material in the effective-mass approximation, and for the donor occupying the quasi-cubic position differ substantially. The EPR spectrum of N in quasi-cubic positions was observed to have a hyperfine structure originating from a comparatively strong coupling with the first two coordination shells of Si and C, which were unambiguously identified. The effective-mass approximation breaks down close to the N donor occupying the quasi-cubic position, and the donor structure and the donor electron distribution become less symmetric. In silicon, reduction of the 29Si content brought about a substantial narrowing of the EPR line of the shallow P and As donors and an increase in the EPR signal intensity, as well as a noticeable increase in the spin-lattice relaxation time T1. This offers the possibility of selectively studying these spectra by optically exciting a region of the crystal in order to shorten T1 and thereby precluding EPR signal saturation only in the illuminated part of the material. This method may be used to advantage in developing materials for quantum computers based on donors in silicon and SiC.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N66fb872657344982a5076705b7ec7c7b
14 Nfdf81611cb75490ba5b0a21d30960787
15 sg:journal.1136591
16 schema:keywords ENDOR data
17 EPR
18 EPR lines
19 EPR signal intensity
20 EPR spectra
21 EPR studies
22 Si
23 Si s
24 SiC
25 SiC crystals
26 SiC.
27 T1
28 acceptor wave functions
29 approximation
30 carbide
31 composition
32 computer
33 content
34 coordination shell
35 coupling
36 crystals
37 data
38 distribution
39 donor electrons
40 donor structure
41 donors
42 effective mass approximation
43 electron distribution
44 electrons
45 function
46 hexagonal positions
47 hyperfine structure
48 illuminated part
49 increase
50 intensity
51 isotopes
52 isotopic composition
53 lattice
54 levels
55 lines
56 magnetic moment
57 materials
58 method
59 moment
60 narrowing
61 noticeable increase
62 nuclear magnetic moments
63 orbitals
64 order
65 part
66 polytypes
67 position
68 possibility
69 present EPR
70 quantum computer
71 reduction
72 region
73 relaxation time T1
74 saturation
75 shallow donors
76 shallow levels
77 shell
78 signal intensity
79 signal saturation
80 silicon
81 silicon carbide
82 silicon crystals
83 spatial distribution
84 spectra
85 spin-lattice relaxation time T1
86 strong coupling
87 structure
88 study
89 substantial narrowing
90 time T1
91 unpaired electron
92 unpaired electron wave function
93 wave functions
94 schema:name Probing of the shallow donor and acceptor wave functions in silicon carbide and silicon through an EPR study of crystals with a modified isotopic composition
95 schema:pagination 2219-2232
96 schema:productId N76c505e366864219abb7e69aa9e93179
97 N87d3c563cac048caba53a07fb9afcafd
98 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034152860
99 https://doi.org/10.1134/1.2142882
100 schema:sdDatePublished 2022-05-20T07:23
101 schema:sdLicense https://scigraph.springernature.com/explorer/license/
102 schema:sdPublisher Nf2a7e1afdbb943e9b0268ee61a5e8745
103 schema:url https://doi.org/10.1134/1.2142882
104 sgo:license sg:explorer/license/
105 sgo:sdDataset articles
106 rdf:type schema:ScholarlyArticle
107 N20e0aee8bc524f718a5de792795f358a rdf:first sg:person.015440263604.97
108 rdf:rest rdf:nil
109 N66fb872657344982a5076705b7ec7c7b schema:issueNumber 12
110 rdf:type schema:PublicationIssue
111 N6d89f4044a9f433d9c63c61bf7bddf42 rdf:first sg:person.012015450711.18
112 rdf:rest Naac9b94554014e62add0a679441db7aa
113 N76c505e366864219abb7e69aa9e93179 schema:name doi
114 schema:value 10.1134/1.2142882
115 rdf:type schema:PropertyValue
116 N7a03f09f8c95441db26aa34d36383202 rdf:first sg:person.014155573051.73
117 rdf:rest Nf855d9b507174844a06156b459b48de8
118 N87d3c563cac048caba53a07fb9afcafd schema:name dimensions_id
119 schema:value pub.1034152860
120 rdf:type schema:PropertyValue
121 N924f059f657e47e2bfbd470d505c4e62 rdf:first sg:person.012324031326.80
122 rdf:rest Nfdd43fc9536d435699febcd976b80191
123 Naac9b94554014e62add0a679441db7aa rdf:first sg:person.014317537257.05
124 rdf:rest N924f059f657e47e2bfbd470d505c4e62
125 Nacfc34440e1f497d8b1982c9a44cc812 rdf:first sg:person.014454350336.50
126 rdf:rest N20e0aee8bc524f718a5de792795f358a
127 Nc2b9608c647b4713afcc05b6d57efc24 rdf:first sg:person.0726165524.63
128 rdf:rest Nd6b45435ad2143f09d0ad3663dc1491c
129 Nd6b45435ad2143f09d0ad3663dc1491c rdf:first sg:person.013474671571.59
130 rdf:rest N6d89f4044a9f433d9c63c61bf7bddf42
131 Nf2a7e1afdbb943e9b0268ee61a5e8745 schema:name Springer Nature - SN SciGraph project
132 rdf:type schema:Organization
133 Nf855d9b507174844a06156b459b48de8 rdf:first sg:person.010422507711.64
134 rdf:rest Nacfc34440e1f497d8b1982c9a44cc812
135 Nfdd43fc9536d435699febcd976b80191 rdf:first sg:person.016652260422.42
136 rdf:rest N7a03f09f8c95441db26aa34d36383202
137 Nfdf81611cb75490ba5b0a21d30960787 schema:volumeNumber 47
138 rdf:type schema:PublicationVolume
139 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
140 schema:name Physical Sciences
141 rdf:type schema:DefinedTerm
142 anzsrc-for:0203 schema:inDefinedTermSet anzsrc-for:
143 schema:name Classical Physics
144 rdf:type schema:DefinedTerm
145 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
146 schema:name Condensed Matter Physics
147 rdf:type schema:DefinedTerm
148 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
149 schema:name Quantum Physics
150 rdf:type schema:DefinedTerm
151 sg:journal.1136591 schema:issn 0367-3294
152 1063-7834
153 schema:name Physics of the Solid State
154 schema:publisher Pleiades Publishing
155 rdf:type schema:Periodical
156 sg:person.010422507711.64 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Kaliteevskii
158 schema:givenName A. K.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010422507711.64
160 rdf:type schema:Person
161 sg:person.012015450711.18 schema:affiliation grid-institutes:None
162 schema:familyName Godisov
163 schema:givenName O. N.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012015450711.18
165 rdf:type schema:Person
166 sg:person.012324031326.80 schema:affiliation grid-institutes:grid.423485.c
167 schema:familyName Ionov
168 schema:givenName A. N.
169 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012324031326.80
170 rdf:type schema:Person
171 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
172 schema:familyName Ber
173 schema:givenName B. Ya.
174 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
175 rdf:type schema:Person
176 sg:person.014155573051.73 schema:affiliation grid-institutes:grid.423485.c
177 schema:familyName Muzafarova
178 schema:givenName M. V.
179 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014155573051.73
180 rdf:type schema:Person
181 sg:person.014317537257.05 schema:affiliation grid-institutes:grid.423485.c
182 schema:familyName Il’in
183 schema:givenName I. V.
184 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014317537257.05
185 rdf:type schema:Person
186 sg:person.014454350336.50 schema:affiliation grid-institutes:None
187 schema:familyName Kaliteevskii
188 schema:givenName M. A.
189 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014454350336.50
190 rdf:type schema:Person
191 sg:person.015440263604.97 schema:affiliation grid-institutes:grid.423485.c
192 schema:familyName Kop’ev
193 schema:givenName P. S.
194 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015440263604.97
195 rdf:type schema:Person
196 sg:person.016652260422.42 schema:affiliation grid-institutes:grid.423485.c
197 schema:familyName Mokhov
198 schema:givenName E. N.
199 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016652260422.42
200 rdf:type schema:Person
201 sg:person.0726165524.63 schema:affiliation grid-institutes:grid.423485.c
202 schema:familyName Baranov
203 schema:givenName P. G.
204 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0726165524.63
205 rdf:type schema:Person
206 sg:pub.10.1007/978-1-4684-0904-8_4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016816187
207 https://doi.org/10.1007/978-1-4684-0904-8_4
208 rdf:type schema:CreativeWork
209 grid-institutes:None schema:alternateName CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia
210 schema:name CENTROTECH EHZ, pr. Stachek 47, 198096, St. Petersburg, Russia
211 rdf:type schema:Organization
212 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
213 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
214 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...