Electrical properties of n-GaN/p-SiC heterojunctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-12

AUTHORS

O. Yu. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, A. A. Lebedev

ABSTRACT

Epitaxial GaN layers were grown by hydride vapor phase epitaxy (HVPE) on commercial (CREE Inc., USA) p+-6H-SiC substrates (Na − Nd ≈ 7.8 × 1017 cms−3) and n+-6H-SiC Lely substrates with a predeposited p+-6H-SiC layer. A study of the electrical properties of the n-GaN/p-SiC heterostructures obtained confirmed their fairly good quality and demonstrated that the given combination of growth techniques is promising for fabrication of bipolar and FET transistors based on the n-GaN/p-SiC heterojunctions. More... »

PAGES

1403-1405

References to SciGraph publications

  • 2000-03. Solutions for heteroepitaxial growth of GaN and their impact on devices in OPTICAL AND QUANTUM ELECTRONICS
  • 1997. GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy in MRS ADVANCES
  • 1996. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.2140313

    DOI

    http://dx.doi.org/10.1134/1.2140313

    DIMENSIONS

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