Electrical properties of n-GaN/p-SiC heterojunctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-12

AUTHORS

O. Yu. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, A. A. Lebedev

ABSTRACT

Epitaxial GaN layers were grown by hydride vapor phase epitaxy (HVPE) on commercial (CREE Inc., USA) p+-6H-SiC substrates (Na − Nd ≈ 7.8 × 1017 cms−3) and n+-6H-SiC Lely substrates with a predeposited p+-6H-SiC layer. A study of the electrical properties of the n-GaN/p-SiC heterostructures obtained confirmed their fairly good quality and demonstrated that the given combination of growth techniques is promising for fabrication of bipolar and FET transistors based on the n-GaN/p-SiC heterojunctions. More... »

PAGES

1403-1405

References to SciGraph publications

  • 2000-03. Solutions for heteroepitaxial growth of GaN and their impact on devices in OPTICAL AND QUANTUM ELECTRONICS
  • 1997. GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy in MRS ADVANCES
  • 1996. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.2140313

    DOI

    http://dx.doi.org/10.1134/1.2140313

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1024664102


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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Condensed Matter Physics", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Quantum Physics", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Ledyaev", 
            "givenName": "O. Yu.", 
            "id": "sg:person.012445354367.95", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012445354367.95"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Strel\u2019chuk", 
            "givenName": "A. M.", 
            "id": "sg:person.07471541177.43", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07471541177.43"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kuznetsov", 
            "givenName": "A. N.", 
            "id": "sg:person.012436124105.42", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Seredova", 
            "givenName": "N. V.", 
            "id": "sg:person.011412514657.19", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011412514657.19"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Zubrilov", 
            "givenName": "A. S.", 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Volkova", 
            "givenName": "A. A.", 
            "id": "sg:person.013357163367.38", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013357163367.38"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Nikolaev", 
            "givenName": "A. E.", 
            "id": "sg:person.010050311505.33", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Lebedev", 
            "givenName": "A. A.", 
            "id": "sg:person.011264364575.18", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1557/s1092578300002179", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1008488966", 
              "https://doi.org/10.1557/s1092578300002179"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1557/proc-482-251", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1067939496", 
              "https://doi.org/10.1557/proc-482-251"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1023/a:1007073421569", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1039494987", 
              "https://doi.org/10.1023/a:1007073421569"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2005-12", 
        "datePublishedReg": "2005-12-01", 
        "description": "Epitaxial GaN layers were grown by hydride vapor phase epitaxy (HVPE) on commercial (CREE Inc., USA) p+-6H-SiC substrates (Na \u2212 Nd \u2248 7.8 \u00d7 1017 cms\u22123) and n+-6H-SiC Lely substrates with a predeposited p+-6H-SiC layer. A study of the electrical properties of the n-GaN/p-SiC heterostructures obtained confirmed their fairly good quality and demonstrated that the given combination of growth techniques is promising for fabrication of bipolar and FET transistors based on the n-GaN/p-SiC heterojunctions.", 
        "genre": "article", 
        "id": "sg:pub.10.1134/1.2140313", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136692", 
            "issn": [
              "1063-7826", 
              "1090-6479"
            ], 
            "name": "Semiconductors", 
            "publisher": "Pleiades Publishing", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "12", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "39"
          }
        ], 
        "keywords": [
          "GaN/p", 
          "hydride vapor phase epitaxy", 
          "electrical properties", 
          "SiC heterojunctions", 
          "SiC layer", 
          "SiC heterostructures", 
          "SiC substrate", 
          "vapor phase epitaxy", 
          "epitaxial GaN layers", 
          "phase epitaxy", 
          "growth technique", 
          "FET transistors", 
          "GaN layers", 
          "heterojunction", 
          "layer", 
          "fabrication", 
          "properties", 
          "transistors", 
          "heterostructures", 
          "epitaxy", 
          "substrate", 
          "good quality", 
          "technique", 
          "combination", 
          "Lely", 
          "quality", 
          "study", 
          "SiC Lely"
        ], 
        "name": "Electrical properties of n-GaN/p-SiC heterojunctions", 
        "pagination": "1403-1405", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1024664102"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1134/1.2140313"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1134/1.2140313", 
          "https://app.dimensions.ai/details/publication/pub.1024664102"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2021-11-01T18:08", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_398.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1134/1.2140313"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.2140313'

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    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.2140313'

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    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.2140313'


     

    This table displays all metadata directly associated to this object as RDF triples.

    150 TRIPLES      22 PREDICATES      58 URIs      46 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1134/1.2140313 schema:about anzsrc-for:02
    2 anzsrc-for:0204
    3 anzsrc-for:0206
    4 schema:author N8129f20530f3471d9ff1c134b204b0d5
    5 schema:citation sg:pub.10.1023/a:1007073421569
    6 sg:pub.10.1557/proc-482-251
    7 sg:pub.10.1557/s1092578300002179
    8 schema:datePublished 2005-12
    9 schema:datePublishedReg 2005-12-01
    10 schema:description Epitaxial GaN layers were grown by hydride vapor phase epitaxy (HVPE) on commercial (CREE Inc., USA) p+-6H-SiC substrates (Na − Nd ≈ 7.8 × 1017 cms−3) and n+-6H-SiC Lely substrates with a predeposited p+-6H-SiC layer. A study of the electrical properties of the n-GaN/p-SiC heterostructures obtained confirmed their fairly good quality and demonstrated that the given combination of growth techniques is promising for fabrication of bipolar and FET transistors based on the n-GaN/p-SiC heterojunctions.
    11 schema:genre article
    12 schema:inLanguage en
    13 schema:isAccessibleForFree false
    14 schema:isPartOf N2d0b266b995f4ebcbdd7d5168a15d1ef
    15 N85a9dcb87ef944baa690a6e4c9ccf1e5
    16 sg:journal.1136692
    17 schema:keywords FET transistors
    18 GaN layers
    19 GaN/p
    20 Lely
    21 SiC Lely
    22 SiC heterojunctions
    23 SiC heterostructures
    24 SiC layer
    25 SiC substrate
    26 combination
    27 electrical properties
    28 epitaxial GaN layers
    29 epitaxy
    30 fabrication
    31 good quality
    32 growth technique
    33 heterojunction
    34 heterostructures
    35 hydride vapor phase epitaxy
    36 layer
    37 phase epitaxy
    38 properties
    39 quality
    40 study
    41 substrate
    42 technique
    43 transistors
    44 vapor phase epitaxy
    45 schema:name Electrical properties of n-GaN/p-SiC heterojunctions
    46 schema:pagination 1403-1405
    47 schema:productId N9d6a8862e17542aaad6862a067fce01e
    48 Ndf940315d2d04774a6aab92fdefbe86e
    49 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024664102
    50 https://doi.org/10.1134/1.2140313
    51 schema:sdDatePublished 2021-11-01T18:08
    52 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    53 schema:sdPublisher N7d975bbef7af4eed9500e9bb8034b342
    54 schema:url https://doi.org/10.1134/1.2140313
    55 sgo:license sg:explorer/license/
    56 sgo:sdDataset articles
    57 rdf:type schema:ScholarlyArticle
    58 N287c9e927cf44092b556eb06ed253f40 rdf:first sg:person.011412514657.19
    59 rdf:rest N8225eb1b99564e7d946b5e07b1114830
    60 N2d0b266b995f4ebcbdd7d5168a15d1ef schema:volumeNumber 39
    61 rdf:type schema:PublicationVolume
    62 N6974d1cbb11343f4b3f1ac849ef7e717 rdf:first sg:person.012436124105.42
    63 rdf:rest N287c9e927cf44092b556eb06ed253f40
    64 N7d975bbef7af4eed9500e9bb8034b342 schema:name Springer Nature - SN SciGraph project
    65 rdf:type schema:Organization
    66 N8129f20530f3471d9ff1c134b204b0d5 rdf:first sg:person.012445354367.95
    67 rdf:rest Nf444adef673a4b2e861fc6f7666e6d53
    68 N8225eb1b99564e7d946b5e07b1114830 rdf:first Nf37de0a6686f4ef191820b608af29019
    69 rdf:rest Nc0920e4556cd4a34ace9bbc74c5ddf8e
    70 N85a9dcb87ef944baa690a6e4c9ccf1e5 schema:issueNumber 12
    71 rdf:type schema:PublicationIssue
    72 N9d6a8862e17542aaad6862a067fce01e schema:name doi
    73 schema:value 10.1134/1.2140313
    74 rdf:type schema:PropertyValue
    75 Na3b7747830824c2f8547c42705f8027a rdf:first sg:person.010050311505.33
    76 rdf:rest Nc3709cabc3e44fa4b754f54a3dcbf265
    77 Nc0920e4556cd4a34ace9bbc74c5ddf8e rdf:first sg:person.013357163367.38
    78 rdf:rest Na3b7747830824c2f8547c42705f8027a
    79 Nc3709cabc3e44fa4b754f54a3dcbf265 rdf:first sg:person.011264364575.18
    80 rdf:rest rdf:nil
    81 Ndf940315d2d04774a6aab92fdefbe86e schema:name dimensions_id
    82 schema:value pub.1024664102
    83 rdf:type schema:PropertyValue
    84 Nf37de0a6686f4ef191820b608af29019 schema:affiliation grid-institutes:grid.423485.c
    85 schema:familyName Zubrilov
    86 schema:givenName A. S.
    87 rdf:type schema:Person
    88 Nf444adef673a4b2e861fc6f7666e6d53 rdf:first sg:person.07471541177.43
    89 rdf:rest N6974d1cbb11343f4b3f1ac849ef7e717
    90 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
    91 schema:name Physical Sciences
    92 rdf:type schema:DefinedTerm
    93 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
    94 schema:name Condensed Matter Physics
    95 rdf:type schema:DefinedTerm
    96 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
    97 schema:name Quantum Physics
    98 rdf:type schema:DefinedTerm
    99 sg:journal.1136692 schema:issn 1063-7826
    100 1090-6479
    101 schema:name Semiconductors
    102 schema:publisher Pleiades Publishing
    103 rdf:type schema:Periodical
    104 sg:person.010050311505.33 schema:affiliation grid-institutes:grid.423485.c
    105 schema:familyName Nikolaev
    106 schema:givenName A. E.
    107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
    108 rdf:type schema:Person
    109 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
    110 schema:familyName Lebedev
    111 schema:givenName A. A.
    112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
    113 rdf:type schema:Person
    114 sg:person.011412514657.19 schema:affiliation grid-institutes:grid.423485.c
    115 schema:familyName Seredova
    116 schema:givenName N. V.
    117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011412514657.19
    118 rdf:type schema:Person
    119 sg:person.012436124105.42 schema:affiliation grid-institutes:grid.423485.c
    120 schema:familyName Kuznetsov
    121 schema:givenName A. N.
    122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012436124105.42
    123 rdf:type schema:Person
    124 sg:person.012445354367.95 schema:affiliation grid-institutes:grid.423485.c
    125 schema:familyName Ledyaev
    126 schema:givenName O. Yu.
    127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012445354367.95
    128 rdf:type schema:Person
    129 sg:person.013357163367.38 schema:affiliation grid-institutes:grid.423485.c
    130 schema:familyName Volkova
    131 schema:givenName A. A.
    132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013357163367.38
    133 rdf:type schema:Person
    134 sg:person.07471541177.43 schema:affiliation grid-institutes:grid.423485.c
    135 schema:familyName Strel’chuk
    136 schema:givenName A. M.
    137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07471541177.43
    138 rdf:type schema:Person
    139 sg:pub.10.1023/a:1007073421569 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039494987
    140 https://doi.org/10.1023/a:1007073421569
    141 rdf:type schema:CreativeWork
    142 sg:pub.10.1557/proc-482-251 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067939496
    143 https://doi.org/10.1557/proc-482-251
    144 rdf:type schema:CreativeWork
    145 sg:pub.10.1557/s1092578300002179 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008488966
    146 https://doi.org/10.1557/s1092578300002179
    147 rdf:type schema:CreativeWork
    148 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    149 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    150 rdf:type schema:Organization
     




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