Temperature dependence of the threshold current of QW lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-10

AUTHORS

N. L. Bazhenov, K. D. Mynbaev, V. I. Ivanov-Omskii, V. A. Smirnov, V. P. Evtikhiev, N. A. Pikhtin, M. G. Rastegaeva, A. L. Stankevich, I. S. Tarasov, A. S. Shkol’nik, G. G. Zegrya

ABSTRACT

The temperature dependence of the threshold current in GaInAs-based laser structures has been studied in a wide temperature range (4.2 ≤ T ≤ 290 K). It is shown that this dependence is monotonic in the entire temperature interval studied. Theoretical expressions for the threshold carrier density are derived and it is demonstrated that this density depends on temperature linearly. It is shown that the main contribution to the threshold current comes from monomolecular (Shockley-Read) recombination at low temperatures. At T > 77 K, the threshold current is determined by radiative recombination. At higher temperatures, close to room temperature, Auger recombination also makes a contribution. The threshold current grows with temperature linearly in the case of radiative recombination and in accordance with T3 in the case of Auger recombination. More... »

PAGES

1210-1214

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.2085272

DOI

http://dx.doi.org/10.1134/1.2085272

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027306705


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