Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-10

AUTHORS

N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov, E. S. Semenova, A. P. Vasil’ev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov, D. Bimberg

ABSTRACT

The optical properties of quantum dots (QDs) formed in GaAs or Al0.3Ga0.7As matrices by overgrowth of initial InAs islands formed in the Stranski-Krastanov mode with thin AlAs/InAlAs layers have been studied. It is shown that no transport of carriers between the QDs occurs in the temperature range 10–300 K, so the carrier distribution is of a nonequilibrium nature. The thermal excitation of carriers from the QDs is suppressed by an increase in the energy spacing between the ground and excited states, absence of the level related to the wetting layer, and higher carrier localization energy in the QDs with respect to the continuum states when the Al0.3Ga0.7As matrix is used. More... »

PAGES

1188-1193

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.2085268

DOI

http://dx.doi.org/10.1134/1.2085268

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017952771


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