Study of the properties of Hg1−x−y−zCdxMnyZnzTe as a new infrared optoelectronic material View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-09

AUTHORS

I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, S. Yu. Karelin

ABSTRACT

The physical parameters of a new five-component HgCdMnZnTe semiconductor alloy are studied. It is shown that this material is quite competitive with HgCdTe, i.e., the basic material for photoelectronics in infrared ranges of 3–5 and 8–14 μm.

PAGES

1017-1022

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

9

VOLUME

39

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.2042590

DOI

http://dx.doi.org/10.1134/1.2042590

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021651483


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