Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-09

AUTHORS

P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

Electron traps in low-temperature-grown ∼40-nm-thick GaAs layers containing nanometer As-Sb clusters have been studied using deep-level transient spectroscopy. Measurements at various bias voltages and small-amplitude filling pulses have allowed the identification of two groups (T1 and T2) of traps with substantially different thermal electron emission rates. It is shown that the density of traps T2 (with an activation energy of 0.56 ± 0.04 eV and electron capture cross section of 2 × 10−13−10−12cm2) is ∼2 × 1012cm−2, while the density of traps T1 (0.44 ± 0.02 eV and 2 × 10−14−10−13 cm2, respectively) is ten times lower. It is assumed that, according to the existence of the two cluster groups observed in the layers under study, traps T2 are associated with clusters 4–7 nm in diameter and traps T1, with clusters up to ∼20 nm in diameter. More... »

PAGES

1013-1016

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.2042589

DOI

http://dx.doi.org/10.1134/1.2042589

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037424822


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