Ontology type: schema:ScholarlyArticle
2005-08
AUTHORSM. D. Efremov, G. N. Kamaev, V. A. Volodin, S. A. Arzhannikova, G. A. Kachurin, S. G. Cherkova, A. V. Kretinin, V. V. Malyutina-Bronskaya, D. V. Marin
ABSTRACTThe electrical characteristics of metal-oxide-semiconductor (MOS) structures with silicon nanoparticles embedded in silicon oxide have been studied. The nanocrystals are formed by decomposition of an oversaturated solid solution of implanted silicon during thermal annealing at a temperature of ∼1000°C. At liquid-nitrogen temperature, a stepped current-voltage characteristic is observed in a MOS structure consisting of Si nanocrystals in a SiO2 film. The stepped current-voltage characteristic is, for the first time, quantitatively described using a model in which charge transport occurs via a chain of local states containing a silicon nanocrystal. The presence of steps is found to be associated with one-electron charging of the silicon nanocrystal and Coulomb blockade of the probability of a hop from the nearest local state to the conducting chain. The local states in silicon dioxide are assumed to be related to an excess of silicon atoms. The presence of such states is confirmed by measurements of the differential conductance and capacitance. For MOS structures implanted with silicon, the differential capacitance and conductance are found to be higher, compared to the reference structures, in the range of biases exceeding 0.2 V. In the same bias range, the conductance is observed to decrease under ultraviolet irradiation due to a change in the population of the states in the conductivity chains. More... »
PAGES910-916
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DOIhttp://dx.doi.org/10.1134/1.2010684
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