Coulomb blockade of the conductivity of SiOx films due to one-electron charging of a silicon quantum dot in a chain ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-08

AUTHORS

M. D. Efremov, G. N. Kamaev, V. A. Volodin, S. A. Arzhannikova, G. A. Kachurin, S. G. Cherkova, A. V. Kretinin, V. V. Malyutina-Bronskaya, D. V. Marin

ABSTRACT

The electrical characteristics of metal-oxide-semiconductor (MOS) structures with silicon nanoparticles embedded in silicon oxide have been studied. The nanocrystals are formed by decomposition of an oversaturated solid solution of implanted silicon during thermal annealing at a temperature of ∼1000°C. At liquid-nitrogen temperature, a stepped current-voltage characteristic is observed in a MOS structure consisting of Si nanocrystals in a SiO2 film. The stepped current-voltage characteristic is, for the first time, quantitatively described using a model in which charge transport occurs via a chain of local states containing a silicon nanocrystal. The presence of steps is found to be associated with one-electron charging of the silicon nanocrystal and Coulomb blockade of the probability of a hop from the nearest local state to the conducting chain. The local states in silicon dioxide are assumed to be related to an excess of silicon atoms. The presence of such states is confirmed by measurements of the differential conductance and capacitance. For MOS structures implanted with silicon, the differential capacitance and conductance are found to be higher, compared to the reference structures, in the range of biases exceeding 0.2 V. In the same bias range, the conductance is observed to decrease under ultraviolet irradiation due to a change in the population of the states in the conductivity chains. More... »

PAGES

910-916

References to SciGraph publications

  • 2000-10. Phenomena in silicon nanostructure devices in APPLIED PHYSICS A
  • Journal

    TITLE

    Semiconductors

    ISSUE

    8

    VOLUME

    39

    Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/1.2010684

    DOI

    http://dx.doi.org/10.1134/1.2010684

    DIMENSIONS

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