Formation of the space charge region in diffusion p-n junctions under high-density current interruption View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-07

AUTHORS

I. V. Grekhov, A. S. Kyuregyan

ABSTRACT

The recovery of diodes with diffusion p-n junctions in the case of high reverse current density j is analyzed. A condition for quasi-neutrality breaking in the diffusion layers with allowance for the dependence of charge carrier mobility μ on electric field strength E is obtained that is valid for a wide range of j. The problem of formation of the space charge region in a circuit with inductance L and resistance R is reduced to a system of two ordinary differential equations. Approximation of a numerical solution to this system makes it possible to derive crude analytical relationships between interrupted current density {ie88-1}, circuit parameters, diode parameters, and parameters of a forming voltage pulse (with amplitude Vm and pulse rise time tp). The limiting parameters of a pulser with an inductive energy storage and current interrupter based on diffusion diodes are studied. The critical density of interrupted current {ie88-2} is determined at which the field in the space charge region near the anode reaches breakdown value Eb and intense impact ionization by holes begins. The impact ionization decreases the rates of current decay and voltage increase in the space charge region. As a result, at {ie88-3}, tp starts increasing and the overvoltage factor of the pulser decreases. The value of Vm corresponding to {ie88-4} is roughly given by {ie88-5}, where m is the number of diodes in the interrupter, ɛ is the permittivity of the semiconductor, {ie88-6} is the saturated drift velocity of holes, and lp is the depth of the p-n junction (diffusion depth). Theoretical predictions are confirmed by exact numerical simulation of the recovery process and qualitatively agree with the available experimental data. More... »

PAGES

904-913

Journal

TITLE

Technical Physics

ISSUE

7

VOLUME

50

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1994972

DOI

http://dx.doi.org/10.1134/1.1994972

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006276853


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grekhov", 
        "givenName": "I. V.", 
        "id": "sg:person.016601261017.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Lenin All-Russia Institute of Electrical Engineering, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kyuregyan", 
        "givenName": "A. S.", 
        "id": "sg:person.01204731551.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0038-1101(68)90134-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021531506"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(68)90134-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021531506"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(87)90215-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027805422"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(87)90215-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027805422"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/proc.1965.4385", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061437911"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/proc.1967.5834", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061439279"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2005-07", 
    "datePublishedReg": "2005-07-01", 
    "description": "The recovery of diodes with diffusion p-n junctions in the case of high reverse current density j is analyzed. A condition for quasi-neutrality breaking in the diffusion layers with allowance for the dependence of charge carrier mobility \u03bc on electric field strength E is obtained that is valid for a wide range of j. The problem of formation of the space charge region in a circuit with inductance L and resistance R is reduced to a system of two ordinary differential equations. Approximation of a numerical solution to this system makes it possible to derive crude analytical relationships between interrupted current density {ie88-1}, circuit parameters, diode parameters, and parameters of a forming voltage pulse (with amplitude Vm and pulse rise time tp). The limiting parameters of a pulser with an inductive energy storage and current interrupter based on diffusion diodes are studied. The critical density of interrupted current {ie88-2} is determined at which the field in the space charge region near the anode reaches breakdown value Eb and intense impact ionization by holes begins. The impact ionization decreases the rates of current decay and voltage increase in the space charge region. As a result, at {ie88-3}, tp starts increasing and the overvoltage factor of the pulser decreases. The value of Vm corresponding to {ie88-4} is roughly given by {ie88-5}, where m is the number of diodes in the interrupter, \u025b is the permittivity of the semiconductor, {ie88-6} is the saturated drift velocity of holes, and lp is the depth of the p-n junction (diffusion depth). Theoretical predictions are confirmed by exact numerical simulation of the recovery process and qualitatively agree with the available experimental data.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1994972", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136240", 
        "issn": [
          "0038-5662", 
          "0044-4642"
        ], 
        "name": "Technical Physics", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "50"
      }
    ], 
    "name": "Formation of the space charge region in diffusion p-n junctions under high-density current interruption", 
    "pagination": "904-913", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "1de626f7fac1f1480a8b83e76bf10b8b8b1e8d9bac0c9609926e433c714a5126"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1994972"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1006276853"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1994972", 
      "https://app.dimensions.ai/details/publication/pub.1006276853"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T23:21", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8693_00000498.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1994972"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1994972'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1994972'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1994972'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1994972'


 

This table displays all metadata directly associated to this object as RDF triples.

82 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1994972 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nea2818edbd8a4c19a9c389a33f63385c
4 schema:citation https://doi.org/10.1016/0038-1101(68)90134-2
5 https://doi.org/10.1016/0038-1101(87)90215-2
6 https://doi.org/10.1109/proc.1965.4385
7 https://doi.org/10.1109/proc.1967.5834
8 schema:datePublished 2005-07
9 schema:datePublishedReg 2005-07-01
10 schema:description The recovery of diodes with diffusion p-n junctions in the case of high reverse current density j is analyzed. A condition for quasi-neutrality breaking in the diffusion layers with allowance for the dependence of charge carrier mobility μ on electric field strength E is obtained that is valid for a wide range of j. The problem of formation of the space charge region in a circuit with inductance L and resistance R is reduced to a system of two ordinary differential equations. Approximation of a numerical solution to this system makes it possible to derive crude analytical relationships between interrupted current density {ie88-1}, circuit parameters, diode parameters, and parameters of a forming voltage pulse (with amplitude Vm and pulse rise time tp). The limiting parameters of a pulser with an inductive energy storage and current interrupter based on diffusion diodes are studied. The critical density of interrupted current {ie88-2} is determined at which the field in the space charge region near the anode reaches breakdown value Eb and intense impact ionization by holes begins. The impact ionization decreases the rates of current decay and voltage increase in the space charge region. As a result, at {ie88-3}, tp starts increasing and the overvoltage factor of the pulser decreases. The value of Vm corresponding to {ie88-4} is roughly given by {ie88-5}, where m is the number of diodes in the interrupter, ɛ is the permittivity of the semiconductor, {ie88-6} is the saturated drift velocity of holes, and lp is the depth of the p-n junction (diffusion depth). Theoretical predictions are confirmed by exact numerical simulation of the recovery process and qualitatively agree with the available experimental data.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N73ecc7489cd24154a52d81c3cce6c683
15 N8b93f1afa68744869d9859f4f6b83910
16 sg:journal.1136240
17 schema:name Formation of the space charge region in diffusion p-n junctions under high-density current interruption
18 schema:pagination 904-913
19 schema:productId N263eebdd638e439dbf108218c3944c92
20 N352fc099862444899ed12be062f853ed
21 N9e1646c6e53f4c98858d1d87edde14a7
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006276853
23 https://doi.org/10.1134/1.1994972
24 schema:sdDatePublished 2019-04-10T23:21
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher N6f0a13b0468246b5839e855a9fe17ef8
27 schema:url http://link.springer.com/10.1134/1.1994972
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N1e6fbc4c90774c0bb548d1f1a19245ae rdf:first sg:person.01204731551.81
32 rdf:rest rdf:nil
33 N263eebdd638e439dbf108218c3944c92 schema:name dimensions_id
34 schema:value pub.1006276853
35 rdf:type schema:PropertyValue
36 N352fc099862444899ed12be062f853ed schema:name readcube_id
37 schema:value 1de626f7fac1f1480a8b83e76bf10b8b8b1e8d9bac0c9609926e433c714a5126
38 rdf:type schema:PropertyValue
39 N6f0a13b0468246b5839e855a9fe17ef8 schema:name Springer Nature - SN SciGraph project
40 rdf:type schema:Organization
41 N73ecc7489cd24154a52d81c3cce6c683 schema:volumeNumber 50
42 rdf:type schema:PublicationVolume
43 N8b93f1afa68744869d9859f4f6b83910 schema:issueNumber 7
44 rdf:type schema:PublicationIssue
45 N9e1646c6e53f4c98858d1d87edde14a7 schema:name doi
46 schema:value 10.1134/1.1994972
47 rdf:type schema:PropertyValue
48 Nea2818edbd8a4c19a9c389a33f63385c rdf:first sg:person.016601261017.57
49 rdf:rest N1e6fbc4c90774c0bb548d1f1a19245ae
50 Nf4ef12b980d640d59594ff1c977c9d05 schema:name Lenin All-Russia Institute of Electrical Engineering, 111250, Moscow, Russia
51 rdf:type schema:Organization
52 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
53 schema:name Engineering
54 rdf:type schema:DefinedTerm
55 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
56 schema:name Materials Engineering
57 rdf:type schema:DefinedTerm
58 sg:journal.1136240 schema:issn 0038-5662
59 0044-4642
60 schema:name Technical Physics
61 rdf:type schema:Periodical
62 sg:person.01204731551.81 schema:affiliation Nf4ef12b980d640d59594ff1c977c9d05
63 schema:familyName Kyuregyan
64 schema:givenName A. S.
65 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81
66 rdf:type schema:Person
67 sg:person.016601261017.57 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
68 schema:familyName Grekhov
69 schema:givenName I. V.
70 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57
71 rdf:type schema:Person
72 https://doi.org/10.1016/0038-1101(68)90134-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021531506
73 rdf:type schema:CreativeWork
74 https://doi.org/10.1016/0038-1101(87)90215-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027805422
75 rdf:type schema:CreativeWork
76 https://doi.org/10.1109/proc.1965.4385 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061437911
77 rdf:type schema:CreativeWork
78 https://doi.org/10.1109/proc.1967.5834 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061439279
79 rdf:type schema:CreativeWork
80 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
81 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
82 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...