Nonohmic quasi-2D hopping conductance and the kinetics of its relaxation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-07

AUTHORS

B. A. Aronzon, D. Yu. Kovalev, 2 V. V. Ryl’kov

ABSTRACT

The nonohmic properties of a quasi-2D hopping-conductance channel are studied. The channel is formed in a p-Si layer by a field effect in the region where the Fermi level crosses the impurity band. It is shown that the dependence of conductance σ on a longitudinal electric field E has a threshold character and obeys the law lnσ(E) ∝ E1/2. The dependences of the conductance of the quasi-2D channel on temperature and the electric field are satisfactorily explained using the concepts of nonlinear screening and of nonohmic properties of disordered systems with a random Coulomb potential. This mechanism of nonlinearity is confirmed by specific features of the mesoscopic fluctuations in the off-diagonal component of resistance, which reflect the reconstruction of a percolation cluster under the action of the longitudinal electric field. A long-term relaxation in conductance is observed during transition from a nonohmic to ohmic mode, which indicates that the system exhibits properties corresponding to electronic glass and that the current paths are significantly modified in a strong electric field. More... »

PAGES

811-819

Journal

TITLE

Semiconductors

ISSUE

7

VOLUME

39

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1992640

DOI

http://dx.doi.org/10.1134/1.1992640

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023468860


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