Stresses in selectively oxidized GaAs/(AlGa)xOy structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-07

AUTHORS

S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov

ABSTRACT

Raman scattering spectroscopy is used to study the process of selective oxidation of Al0.97Ga0.03As layers. Stresses arising in GaAs/(AlGa)xOy layers as a result of selective oxidation under different conditions are determined. The effects of local heating of the samples with laser radiation during measurements of the Raman signals, photoresist hardening resulting from the oxidation, and overoxidation are analyzed. The instrumentation and method of selective oxidation are optimized; as a result, arrays of vertical-cavity surface-emitting lasers are fabricated. The active region of these lasers is based on two InGaAs quantum wells with top oxidized and bottom semiconductor distributed Bragg reflectors. More... »

PAGES

748-753

Journal

TITLE

Semiconductors

ISSUE

7

VOLUME

39

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1992627

DOI

http://dx.doi.org/10.1134/1.1992627

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051330614


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