Thermal-field forward current in GaN-based surface-barrier structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-06

AUTHORS

T. V. Blank, Yu. A. Goldberg, E. E. Zavarin, O. V. Konstantinov, N. M. Shmidt

ABSTRACT

The voltage and temperature dependences of the capacitance and forward current in surface-barrier Ni-n-GaN structures are experimentally studied. The results are compared with the Padovani-Stratton thermofield emission theory. It is established that, in a temperature range of 250–410 K, the forward current of the Ni-n-GaN surface-barrier structures (the electron density in GaN is ∼1017 cm−3) is caused by a thermofield emission of electrons, whose energy is ∼0.1 eV below the potential-barrier top. More... »

PAGES

674-678

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1944858

DOI

http://dx.doi.org/10.1134/1.1944858

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1052575755


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