Specific features of epitaxial-film formation on porous III–V substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-05

AUTHORS

A. A. Sitnikova, A. V. Bobyl, S. G. Konnikov, V. P. Ulin

ABSTRACT

Porous GaAs (100) and (111) substrates with nanostructured (∼10 nm) surface profiles are obtained in which pores branching in the 〈111〉 direction form a dense network with a volume density of ∼60% under the surface at a depth of ∼(50–100) nm. The surface of the substrates and the structure of GaSb layers grown on these substrates are studied. A decrease of 22% in the lattice-parameter mismatch at the GaSb/GaAs(porous) interface compared with that at the GaSb/GaAs(monolithic) interface is observed. Ideas about the chemical mechanisms of pore formation in III–V crystals are developed, and relations connecting the structure of porous layers to the composition of electrolytes and anodization conditions are established. It is shown that the dependence of the layers’ growth rate on lattice elastic strain can be conducive to an enhanced overgrowth of pores and to a transition to planar growth. More... »

PAGES

523-527

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

39

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1923558

DOI

http://dx.doi.org/10.1134/1.1923558

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038586907


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