Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-04

AUTHORS

I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, G. G. Zegrya

ABSTRACT

Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ∼1.3 μm, have been studied. Dependences of the nonradiative lifetime and effective Auger coefficient in QDs are obtained from an analysis of temperature and current dependences of the efficiency of spontaneous radiative recombination. The zero-threshold Auger recombination channel in QDs is shown to dominate at low (below 200 K) temperature, whereas at higher temperatures the quasithreshold channel becomes dominant. The effective 3D Auger coefficient is estimated in the approximation of a spherical QD, and a good agreement with the experimental data is obtained. More... »

PAGES

481-484

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1900267

DOI

http://dx.doi.org/10.1134/1.1900267

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007639629


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