Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-04

AUTHORS

I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinskii, M. V. Maksimov, Yu. M. Shernyakov, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, N. N. Ledentsov

ABSTRACT

A detailed study of the effect of p-doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a laser doped with 2 × 1012 cm−2 acceptors per QD sheet, the characteristic temperature of 1200 K is obtained in the temperature range 15–75°C and the differential quantum efficiency is stable in the range 15–65°C. A maximum CW output power of 4.4 W is reached in an optimized structure. More... »

PAGES

477-480

Journal

TITLE

Semiconductors

ISSUE

4

VOLUME

39

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1900266

DOI

http://dx.doi.org/10.1134/1.1900266

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015604878


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