Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-04

AUTHORS

N. A. Maleev, A. G. Kuz’menkov, A. E. Zhukov, A. P. Vasil’ev, A. S. Shulenkov, S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova, D. A. Livshits, M. V. Maksimov, V. M. Ustinov

ABSTRACT

The design and fabrication technology for integrated arrays for vertical-cavity surface-emitting lasers with bottom AlGaAs/GaAs semiconductor and top AlGaO/GaAs distributed Bragg reflectors is suggested. Arrays containing 8×8 lasers with an active region based on two InGaAs quantum wells were produced. Individual emitters with an oxidized aperture of 8–10 μm in diameter demonstrate cw lasing at 960–965 nm at room temperature, with a threshold current of 1.0–2.5 mA, external efficiency of up to 0.4 mW/mA, and a maximum output power of over 2 mW. More... »

PAGES

462-466

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1900263

DOI

http://dx.doi.org/10.1134/1.1900263

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031725324


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