A vacancy model of the heteropolytype epitaxy of SiC View Full Text


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Article Info

DATE

2005-03

AUTHORS

A. A. Lebedev, S. Yu. Davydov

ABSTRACT

A model for the transformation of SiC polytypes occurring during the growth of an epitaxial layer is suggested that is based on the variation over time of the concentration of carbon vacancies in a transition layer. Experimental data are analyzed in terms of this model. It is shown that the parameter η=Gτ/LT (LT is the thickness of the transition layer, G is the film growth rate, and τ is the lifetime of a vacancy in the transition layer) is invariant with respect to the method and temperature of the growth of the epitaxial layer. This parameter is determined only by the concentration of carbon vacancies in the substrate and in the film. More... »

PAGES

277-280

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1882785

DOI

http://dx.doi.org/10.1134/1.1882785

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036961412


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