Kinetics and inhomogeneous carrier injection in InGaN nanolayers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-02

AUTHORS

D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul’nikov, N. N. Ledentsov

ABSTRACT

The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer that has a reduced In content at higher temperatures raises the confinement energy of carriers in QDs. Furthermore, inhomogeneous carrier injection, predominantly into regions with higher confinement energy, is observed. The electrical and optical properties of p-n junctions and the effect of the inhomogeneities on these properties are studied in detail. It is shown that the shifts of photoluminescence and electroluminescence lines, which are observed when changing the experimental conditions, are related to these properties of the inhomogeneities in the p-n junction. More... »

PAGES

249-253

Journal

TITLE

Semiconductors

ISSUE

2

VOLUME

39

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1864208

DOI

http://dx.doi.org/10.1134/1.1864208

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020653562


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sizov", 
        "givenName": "D. S.", 
        "id": "sg:person.011740302075.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011740302075.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sizov", 
        "givenName": "V. S.", 
        "id": "sg:person.014637527201.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.014031571265.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014031571265.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fomin", 
        "givenName": "A. V.", 
        "id": "sg:person.011237053103.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011237053103.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsul\u2019nikov", 
        "givenName": "A. F.", 
        "id": "sg:person.012131633577.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.014140400702.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/s0022-0248(00)00993-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012546565"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssa.200306148", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039732988"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.116351", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057680564"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.119797", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057683983"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.122247", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057686410"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.123275", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057687425"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1350621", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057697584"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1391227", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057702202"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.66.155310", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060604670"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.66.155310", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060604670"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.590149", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062200195"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.38.3976", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063061844"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.39.l129", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063064790"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2005-02", 
    "datePublishedReg": "2005-02-01", 
    "description": "The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer that has a reduced In content at higher temperatures raises the confinement energy of carriers in QDs. Furthermore, inhomogeneous carrier injection, predominantly into regions with higher confinement energy, is observed. The electrical and optical properties of p-n junctions and the effect of the inhomogeneities on these properties are studied in detail. It is shown that the shifts of photoluminescence and electroluminescence lines, which are observed when changing the experimental conditions, are related to these properties of the inhomogeneities in the p-n junction.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1864208", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "39"
      }
    ], 
    "name": "Kinetics and inhomogeneous carrier injection in InGaN nanolayers", 
    "pagination": "249-253", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "6268b96b9d7d50e639f48d71a34eb8207b7e3869a30d9260aa5c63be28c697d2"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1864208"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1020653562"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1864208", 
      "https://app.dimensions.ai/details/publication/pub.1020653562"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T19:06", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8678_00000499.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1864208"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/1.1864208'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/1.1864208'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/1.1864208'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/1.1864208'


 

This table displays all metadata directly associated to this object as RDF triples.

139 TRIPLES      21 PREDICATES      39 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1864208 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N852d2c32806f4e01aab6899920d53e54
4 schema:citation https://doi.org/10.1002/pssa.200306148
5 https://doi.org/10.1016/s0022-0248(00)00993-3
6 https://doi.org/10.1063/1.116351
7 https://doi.org/10.1063/1.119797
8 https://doi.org/10.1063/1.122247
9 https://doi.org/10.1063/1.123275
10 https://doi.org/10.1063/1.1350621
11 https://doi.org/10.1063/1.1391227
12 https://doi.org/10.1103/physrevb.66.155310
13 https://doi.org/10.1116/1.590149
14 https://doi.org/10.1143/jjap.38.3976
15 https://doi.org/10.1143/jjap.39.l129
16 schema:datePublished 2005-02
17 schema:datePublishedReg 2005-02-01
18 schema:description The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer that has a reduced In content at higher temperatures raises the confinement energy of carriers in QDs. Furthermore, inhomogeneous carrier injection, predominantly into regions with higher confinement energy, is observed. The electrical and optical properties of p-n junctions and the effect of the inhomogeneities on these properties are studied in detail. It is shown that the shifts of photoluminescence and electroluminescence lines, which are observed when changing the experimental conditions, are related to these properties of the inhomogeneities in the p-n junction.
19 schema:genre research_article
20 schema:inLanguage en
21 schema:isAccessibleForFree false
22 schema:isPartOf N4fcd77d5c9b342f7a43562b56d7f2a65
23 Nf287ff52556645ccbea4c5926bae8b69
24 sg:journal.1136692
25 schema:name Kinetics and inhomogeneous carrier injection in InGaN nanolayers
26 schema:pagination 249-253
27 schema:productId N1bca7d2705d748b9b7c3fba81f59d407
28 N974311fc7d1849f68911066e1ee7b055
29 N9bbf01d188014f5b903976ee3fe5f8ae
30 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020653562
31 https://doi.org/10.1134/1.1864208
32 schema:sdDatePublished 2019-04-10T19:06
33 schema:sdLicense https://scigraph.springernature.com/explorer/license/
34 schema:sdPublisher Ndc9554441eeb41fab9fce76b2b1e946f
35 schema:url http://link.springer.com/10.1134/1.1864208
36 sgo:license sg:explorer/license/
37 sgo:sdDataset articles
38 rdf:type schema:ScholarlyArticle
39 N1bca7d2705d748b9b7c3fba81f59d407 schema:name dimensions_id
40 schema:value pub.1020653562
41 rdf:type schema:PropertyValue
42 N229a007a55c842c3835dc41ebfb5eba3 rdf:first sg:person.012131633577.53
43 rdf:rest Na836206dbd4e4e308d8d8b29fcb90aaf
44 N4fcd77d5c9b342f7a43562b56d7f2a65 schema:issueNumber 2
45 rdf:type schema:PublicationIssue
46 N686ae50dc2a9433698eb894018f5a926 rdf:first sg:person.014637527201.21
47 rdf:rest Nb6bbf1ea788b4d19ba947de1aa8934cf
48 N81eea4ea0e224fe7a9e597d7d772d635 rdf:first sg:person.013427374503.16
49 rdf:rest Ne9e897ec9a724073bc4a9743e0d5641a
50 N852d2c32806f4e01aab6899920d53e54 rdf:first sg:person.011740302075.99
51 rdf:rest N686ae50dc2a9433698eb894018f5a926
52 N974311fc7d1849f68911066e1ee7b055 schema:name doi
53 schema:value 10.1134/1.1864208
54 rdf:type schema:PropertyValue
55 N9bbf01d188014f5b903976ee3fe5f8ae schema:name readcube_id
56 schema:value 6268b96b9d7d50e639f48d71a34eb8207b7e3869a30d9260aa5c63be28c697d2
57 rdf:type schema:PropertyValue
58 Na836206dbd4e4e308d8d8b29fcb90aaf rdf:first sg:person.014140400702.37
59 rdf:rest rdf:nil
60 Nb6bbf1ea788b4d19ba947de1aa8934cf rdf:first sg:person.014031571265.08
61 rdf:rest N81eea4ea0e224fe7a9e597d7d772d635
62 Ndc9554441eeb41fab9fce76b2b1e946f schema:name Springer Nature - SN SciGraph project
63 rdf:type schema:Organization
64 Ne9e897ec9a724073bc4a9743e0d5641a rdf:first sg:person.011237053103.53
65 rdf:rest N229a007a55c842c3835dc41ebfb5eba3
66 Nf287ff52556645ccbea4c5926bae8b69 schema:volumeNumber 39
67 rdf:type schema:PublicationVolume
68 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
69 schema:name Engineering
70 rdf:type schema:DefinedTerm
71 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
72 schema:name Materials Engineering
73 rdf:type schema:DefinedTerm
74 sg:journal.1136692 schema:issn 1063-7826
75 1090-6479
76 schema:name Semiconductors
77 rdf:type schema:Periodical
78 sg:person.011237053103.53 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
79 schema:familyName Fomin
80 schema:givenName A. V.
81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011237053103.53
82 rdf:type schema:Person
83 sg:person.011740302075.99 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
84 schema:familyName Sizov
85 schema:givenName D. S.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011740302075.99
87 rdf:type schema:Person
88 sg:person.012131633577.53 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
89 schema:familyName Tsatsul’nikov
90 schema:givenName A. F.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53
92 rdf:type schema:Person
93 sg:person.013427374503.16 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
94 schema:familyName Lundin
95 schema:givenName V. V.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
97 rdf:type schema:Person
98 sg:person.014031571265.08 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
99 schema:familyName Zavarin
100 schema:givenName E. E.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014031571265.08
102 rdf:type schema:Person
103 sg:person.014140400702.37 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
104 schema:familyName Ledentsov
105 schema:givenName N. N.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37
107 rdf:type schema:Person
108 sg:person.014637527201.21 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
109 schema:familyName Sizov
110 schema:givenName V. S.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21
112 rdf:type schema:Person
113 https://doi.org/10.1002/pssa.200306148 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039732988
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1016/s0022-0248(00)00993-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012546565
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1063/1.116351 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057680564
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1063/1.119797 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057683983
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1063/1.122247 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057686410
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1063/1.123275 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057687425
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1063/1.1350621 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057697584
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1063/1.1391227 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057702202
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1103/physrevb.66.155310 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060604670
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1116/1.590149 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062200195
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1143/jjap.38.3976 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063061844
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1143/jjap.39.l129 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063064790
136 rdf:type schema:CreativeWork
137 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
138 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
139 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...