MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

N. A. Sobolev, D. V. Denisov, A. M. Emel’yanov, E. I. Shek, B. Ya. Ber, A. P. Kovarskii, V. I. Sakharov, I. T. Serenkov, V. M. Ustinov, G. E. Cirlin, T. V. Kotereva

ABSTRACT

The technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ∼2.2 eV. More... »

PAGES

113-116

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1853458

DOI

http://dx.doi.org/10.1134/1.1853458

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028646165


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