Ontology type: schema:ScholarlyArticle
2005-01
AUTHORSN. A. Sobolev, D. V. Denisov, A. M. Emel’yanov, E. I. Shek, B. Ya. Ber, A. P. Kovarskii, V. I. Sakharov, I. T. Serenkov, V. M. Ustinov, G. E. Cirlin, T. V. Kotereva
ABSTRACTThe technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ∼2.2 eV. More... »
PAGES113-116
http://scigraph.springernature.com/pub.10.1134/1.1853458
DOIhttp://dx.doi.org/10.1134/1.1853458
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