The engineering and properties of InAs quantum dot molecules in a GaAs matrix View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya, V. M. Ustinov, L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, A. Andreev

ABSTRACT

Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by transmission electron microscopy demonstrated that the vertically aligned QDs are equal in size. Photoluminescence measurements revealed that the spectra of the samples under study contain bands corresponding to electronic states in QD molecules. More... »

PAGES

124-126

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1852660

DOI

http://dx.doi.org/10.1134/1.1852660

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026610641


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182 Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
183 rdf:type schema:Organization
 




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