Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin, E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, D. Gerthsen

ABSTRACT

The behavior of threading dislocations in AlGaN and InGaN layers incorporated into GaN-based heterostructures is studied. It is shown that InGaN layers with an intermediate composition can be used as the most effective dislocation filters. Estimations of the stresses generated by dislocations and nanodomains show good agreement between the theory and experiment. More... »

PAGES

100-102

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1852655

DOI

http://dx.doi.org/10.1134/1.1852655

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039933078


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