Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev, Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov, S. Hanna, A. Seilmeier, N. D. Zakharov, P. Werner

ABSTRACT

Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been calculated for different polarizations of light, and a good agreement with the experimental data is obtained. It is shown that the intraband absorption of light by electrons strongly exceeds the absorption by holes. Photoluminescence spectra and TEM images of structures with artificial molecules formed by pairs of QDs were studied. More... »

PAGES

50-53

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1852644

DOI

http://dx.doi.org/10.1134/1.1852644

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028151342


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