A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2005-01

AUTHORS

P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

ABSTRACT

Electronic traps in “low-temperature” GaAs (LT-GaAs) grown at 150°C were studied. The As-Sb clusters appearing in this material after annealing were located in a plane that contained a single Sb monolayer formed during growth. The diameter of the clusters was as large as 20 nm. For the purpose of measurement, Au-n-GaAs Schottky barriers were used, in which, for certain bias voltages, the space charge region enclosed the narrow LT-GaAs layer containing the plane of clusters. The bias-voltage dependence of the structure capacitance indicates that the majority of the electrons in this layer are captured by traps, whose energy level lies ∼0.5 eV below the bottom of the conduction band. The energy density of states at this energy is 1014 cm−2 eV−1, which sharply decreases towards the midgap. The existence of traps with activation energies of ∼0.5 eV for the thermal emission of electrons is confirmed by deep-level transient spectroscopy. The magnitude of the electroncapture cross section determined by this method is in the range 5 × 10−14−1 × 10−12 cm2. It is assumed that traps of this type are related to large As-Sb clusters. More... »

PAGES

33-36

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1852640

DOI

http://dx.doi.org/10.1134/1.1852640

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047378186


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0202", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Atomic, Molecular, Nuclear, Particle and Plasma Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brunkov", 
        "givenName": "P. N.", 
        "id": "sg:person.011771360023.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gutkin", 
        "givenName": "A. A.", 
        "id": "sg:person.016423303441.91", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chaldyshev", 
        "givenName": "V. V.", 
        "id": "sg:person.010716755351.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bert", 
        "givenName": "N. N.", 
        "id": "sg:person.016651151263.52", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016651151263.52"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Konnikov", 
        "givenName": "S. G.", 
        "id": "sg:person.016341426205.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenskii", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.014730523656.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0921-5107(01)00904-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021255487"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1413219", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057704106"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.35.1630", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063055419"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2005-01", 
    "datePublishedReg": "2005-01-01", 
    "description": "Electronic traps in \u201clow-temperature\u201d GaAs (LT-GaAs) grown at 150\u00b0C were studied. The As-Sb clusters appearing in this material after annealing were located in a plane that contained a single Sb monolayer formed during growth. The diameter of the clusters was as large as 20 nm. For the purpose of measurement, Au-n-GaAs Schottky barriers were used, in which, for certain bias voltages, the space charge region enclosed the narrow LT-GaAs layer containing the plane of clusters. The bias-voltage dependence of the structure capacitance indicates that the majority of the electrons in this layer are captured by traps, whose energy level lies \u223c0.5 eV below the bottom of the conduction band. The energy density of states at this energy is 1014 cm\u22122 eV\u22121, which sharply decreases towards the midgap. The existence of traps with activation energies of \u223c0.5 eV for the thermal emission of electrons is confirmed by deep-level transient spectroscopy. The magnitude of the electroncapture cross section determined by this method is in the range 5 \u00d7 10\u221214\u22121 \u00d7 10\u221212 cm2. It is assumed that traps of this type are related to large As-Sb clusters.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/1.1852640", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "39"
      }
    ], 
    "name": "A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide", 
    "pagination": "33-36", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e1b1d7c82da9d134f191b4d2cf5a03000945a1a2ebeb8e47eca728235de86306"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/1.1852640"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1047378186"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/1.1852640", 
      "https://app.dimensions.ai/details/publication/pub.1047378186"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T01:57", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8700_00000501.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134/1.1852640"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

132 TRIPLES      21 PREDICATES      31 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/1.1852640 schema:about anzsrc-for:02
2 anzsrc-for:0202
3 schema:author Nde22046d77354d02982c26d8b4259584
4 schema:citation https://doi.org/10.1016/0022-0248(91)90943-y
5 https://doi.org/10.1016/s0921-5107(01)00904-7
6 https://doi.org/10.1063/1.1413219
7 https://doi.org/10.1143/jjap.35.1630
8 schema:datePublished 2005-01
9 schema:datePublishedReg 2005-01-01
10 schema:description Electronic traps in “low-temperature” GaAs (LT-GaAs) grown at 150°C were studied. The As-Sb clusters appearing in this material after annealing were located in a plane that contained a single Sb monolayer formed during growth. The diameter of the clusters was as large as 20 nm. For the purpose of measurement, Au-n-GaAs Schottky barriers were used, in which, for certain bias voltages, the space charge region enclosed the narrow LT-GaAs layer containing the plane of clusters. The bias-voltage dependence of the structure capacitance indicates that the majority of the electrons in this layer are captured by traps, whose energy level lies ∼0.5 eV below the bottom of the conduction band. The energy density of states at this energy is 1014 cm−2 eV−1, which sharply decreases towards the midgap. The existence of traps with activation energies of ∼0.5 eV for the thermal emission of electrons is confirmed by deep-level transient spectroscopy. The magnitude of the electroncapture cross section determined by this method is in the range 5 × 10−14−1 × 10−12 cm2. It is assumed that traps of this type are related to large As-Sb clusters.
11 schema:genre research_article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N2e48b3c1789b4998a0a054099f7fa68d
15 N788c565b19cd44589ce5cce1429d1b42
16 sg:journal.1136692
17 schema:name A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide
18 schema:pagination 33-36
19 schema:productId N73720a4cf77644028f418d62b9652bcd
20 N8cf6cac749ba45af98fe3c81f30b9a69
21 N9afef9b95a4b4887a091433db75e7253
22 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047378186
23 https://doi.org/10.1134/1.1852640
24 schema:sdDatePublished 2019-04-11T01:57
25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
26 schema:sdPublisher Nc3a55c84d64043a2aa13d8de26539efd
27 schema:url http://link.springer.com/10.1134/1.1852640
28 sgo:license sg:explorer/license/
29 sgo:sdDataset articles
30 rdf:type schema:ScholarlyArticle
31 N022b9003a0bb402ab99013f716f1cd6f rdf:first sg:person.014730523656.90
32 rdf:rest N92327315670641c18e2f9d34097c0756
33 N2e48b3c1789b4998a0a054099f7fa68d schema:issueNumber 1
34 rdf:type schema:PublicationIssue
35 N3748c02a67a74b998192712f84ceb197 rdf:first sg:person.010716755351.29
36 rdf:rest N5bc6065664874dcd9eab657226831c06
37 N5bc6065664874dcd9eab657226831c06 rdf:first sg:person.016651151263.52
38 rdf:rest Na57cc8d5573d4ba28584a6c26dc5f379
39 N73720a4cf77644028f418d62b9652bcd schema:name dimensions_id
40 schema:value pub.1047378186
41 rdf:type schema:PropertyValue
42 N788c565b19cd44589ce5cce1429d1b42 schema:volumeNumber 39
43 rdf:type schema:PublicationVolume
44 N8cf6cac749ba45af98fe3c81f30b9a69 schema:name readcube_id
45 schema:value e1b1d7c82da9d134f191b4d2cf5a03000945a1a2ebeb8e47eca728235de86306
46 rdf:type schema:PropertyValue
47 N92327315670641c18e2f9d34097c0756 rdf:first sg:person.011644303155.87
48 rdf:rest rdf:nil
49 N9afef9b95a4b4887a091433db75e7253 schema:name doi
50 schema:value 10.1134/1.1852640
51 rdf:type schema:PropertyValue
52 Na57cc8d5573d4ba28584a6c26dc5f379 rdf:first sg:person.016341426205.71
53 rdf:rest Nf04a4e094dca4f419cccdea903d76c3a
54 Nc08a3f444c974e28af8792ae84d39994 rdf:first sg:person.016423303441.91
55 rdf:rest Nfcfb4d1f41884a7797487144f3d5dcec
56 Nc3a55c84d64043a2aa13d8de26539efd schema:name Springer Nature - SN SciGraph project
57 rdf:type schema:Organization
58 Nde22046d77354d02982c26d8b4259584 rdf:first sg:person.011771360023.05
59 rdf:rest Nc08a3f444c974e28af8792ae84d39994
60 Nf04a4e094dca4f419cccdea903d76c3a rdf:first sg:person.010664106542.73
61 rdf:rest N022b9003a0bb402ab99013f716f1cd6f
62 Nfcfb4d1f41884a7797487144f3d5dcec rdf:first sg:person.014603755431.88
63 rdf:rest N3748c02a67a74b998192712f84ceb197
64 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
65 schema:name Physical Sciences
66 rdf:type schema:DefinedTerm
67 anzsrc-for:0202 schema:inDefinedTermSet anzsrc-for:
68 schema:name Atomic, Molecular, Nuclear, Particle and Plasma Physics
69 rdf:type schema:DefinedTerm
70 sg:journal.1136692 schema:issn 1063-7826
71 1090-6479
72 schema:name Semiconductors
73 rdf:type schema:Periodical
74 sg:person.010664106542.73 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
75 schema:familyName Preobrazhenskii
76 schema:givenName V. V.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
78 rdf:type schema:Person
79 sg:person.010716755351.29 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
80 schema:familyName Chaldyshev
81 schema:givenName V. V.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29
83 rdf:type schema:Person
84 sg:person.011644303155.87 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
85 schema:familyName Semyagin
86 schema:givenName B. R.
87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
88 rdf:type schema:Person
89 sg:person.011771360023.05 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
90 schema:familyName Brunkov
91 schema:givenName P. N.
92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05
93 rdf:type schema:Person
94 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
95 schema:familyName Musikhin
96 schema:givenName Yu. G.
97 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
98 rdf:type schema:Person
99 sg:person.014730523656.90 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
100 schema:familyName Putyato
101 schema:givenName M. A.
102 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90
103 rdf:type schema:Person
104 sg:person.016341426205.71 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
105 schema:familyName Konnikov
106 schema:givenName S. G.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016341426205.71
108 rdf:type schema:Person
109 sg:person.016423303441.91 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
110 schema:familyName Gutkin
111 schema:givenName A. A.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91
113 rdf:type schema:Person
114 sg:person.016651151263.52 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
115 schema:familyName Bert
116 schema:givenName N. N.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016651151263.52
118 rdf:type schema:Person
119 https://doi.org/10.1016/0022-0248(91)90943-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1016682839
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1016/s0921-5107(01)00904-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021255487
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1063/1.1413219 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057704106
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1143/jjap.35.1630 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063055419
126 rdf:type schema:CreativeWork
127 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
128 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
129 rdf:type schema:Organization
130 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
131 schema:name Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia
132 rdf:type schema:Organization
 




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