Peculiarities in the morphology of ge island array on Si(100) at a subcritical thickness of the deposited Ge layer View Full Text


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Article Info

DATE

2004-11

AUTHORS

V. G. Dubrovskii, A. A. Tonkikh, G. E. Cirlin, V. M. Ustinov, P. Werner

ABSTRACT

Experiments revealed the formation of Ge islands on a Si(100) surface at an effective thickness of the deposited germanium layer below the critical value for the transition from two-to three-dimensional growth. The number density of Ge islands in the array was 3×108 cm−2. The results are interpreted within the framework of a kinetic model of the island formation in heteroepitaxial systems with lattice mismatch. More... »

PAGES

920-923

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1829343

DOI

http://dx.doi.org/10.1134/1.1829343

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017107919


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