SIMS analysis of ultrathin implanted arsenic layers in silicon View Full Text


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Article Info

DATE

2004-11

AUTHORS

D. S. Kibalov, O. M. Orlov, S. G. Simakin, V. K. Smirnov

ABSTRACT

A new regime of secondary ion mass spectrometry (SIMS) is proposed, which allows a depth resolution of λ=1.4 nm to be achieved. The profiles of arsenic implanted into silicon, measured using this regime on a Cameca IMS-4f microprobe, were close to the true distributions. SIMS profiling of the samples of silicon implanted with 30-keV As+ ions to a total dose of (1.25–3.13)×1013 cm−2 through a 20-nm-thick thermal oxide layer showed the presence of a sharp peak of arsenic accumulated at the oxide/silicon interface, which is explained by the diffusion of arsenic to this interface as a result of annealing. More... »

PAGES

897-899

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1829135

DOI

http://dx.doi.org/10.1134/1.1829135

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1033695450


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