MOCVD-grown AlGaN/GaN heterostructures with high electron mobility View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-11

AUTHORS

V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul’nikov, N. N. Ledentsov, Zh. I. Alferov, R. Kakanakov

ABSTRACT

Specific features of MOCVD growth of AlGaN/GaN heterostructures have been studied. In the structures obtained, the 2D electron gas in the channel had a density of 1.2×1013 cm−2 and a mobility of 1290 cm2/(V s) at room temperature. The effect of the purity of starting components on the properties of the structure is studied. More... »

PAGES

1323-1325

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1823068

DOI

http://dx.doi.org/10.1134/1.1823068

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028251694


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