Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100) View Full Text


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Article Info

DATE

2004-10

AUTHORS

A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, P. Werner

ABSTRACT

Morphological properties of Ge nanoscale island arrays formed on the Si(100) surface during molecular beam epitaxy are studied using reflection high-energy electron diffraction and atomic-force microscopy. It is shown that codeposition of Sb and Ge significantly increases the density of final island arrays and suppresses the formation of dome-shaped clusters at substrate temperatures of 550–600°C. The results are discussed in the context of the kinetic model of formation of elastically strained islands in heteroepitaxial systems with a lattice mismatch. More... »

PAGES

1202-1206

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1808829

DOI

http://dx.doi.org/10.1134/1.1808829

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015859895


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