Formation and study of buried SiC layers with a high content of radiation defects View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-10

AUTHORS

E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, A. A. Lebedev

ABSTRACT

Protons with energy E=100 keV were implanted with doses ranging from 2×1017 to 4×1017 cm−2 into 6H-and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550–1500°C. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800°C only after implantation of protons with a dose of ≤3×1017 cm−2. A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of ∼1200°C and is completed after annealing at a temperature of ∼1500°C. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures ≥800°C and is complete after annealing at a temperature of 1500°C. More... »

PAGES

1176-1178

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1808824

DOI

http://dx.doi.org/10.1134/1.1808824

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046758295


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