Ontology type: schema:ScholarlyArticle
2004-08
AUTHORSE. V. Nikitina, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, A. G. Gladyshev, N. V. Kryzhanovskaya, M. V. Maksimov, Yu. M. Shernyakov, V. M. Ustinov, N. N. Ledentsov
ABSTRACTWe have studied the effect of high-temperature annealing on the properties of a laser heterostructure with InAs quantum dots in AlAs/GaAs superlattice. By increasing the time of annealing at 700°C, it is possible to provide for a smooth variation of the lasing wavelength from 1290 to 916 nm at a constant threshold current density (250 A/cm2 at T0=110 K). By annealing the structure at 750°C, the lasing wavelength can be reduced to 845 nm. More... »
PAGES644-646
http://scigraph.springernature.com/pub.10.1134/1.1792300
DOIhttp://dx.doi.org/10.1134/1.1792300
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