Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-08

AUTHORS

E. V. Nikitina, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, A. G. Gladyshev, N. V. Kryzhanovskaya, M. V. Maksimov, Yu. M. Shernyakov, V. M. Ustinov, N. N. Ledentsov

ABSTRACT

We have studied the effect of high-temperature annealing on the properties of a laser heterostructure with InAs quantum dots in AlAs/GaAs superlattice. By increasing the time of annealing at 700°C, it is possible to provide for a smooth variation of the lasing wavelength from 1290 to 916 nm at a constant threshold current density (250 A/cm2 at T0=110 K). By annealing the structure at 750°C, the lasing wavelength can be reduced to 845 nm. More... »

PAGES

644-646

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1792300

DOI

http://dx.doi.org/10.1134/1.1792300

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017654264


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