Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-07

AUTHORS

N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul’nikov, N. N. Ledentsov, P. Werner, F. Guffart, D. Bimberg

ABSTRACT

Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a thick InGaAs metamorphic layer grown on a GaAs substrate have been studied. The density and lateral size of QDs are shown to increase in comparison with the case of QDs grown directly on a GaAs substrate. The rise of In content in the InGaAs layer results in the red shift of the photoluminescence (PL) line, so that with 30 at % indium in the metamorphic layer the PL peak lies at 1.55 µm. The PL excitation spectroscopy of the electronic spectrum of QDs has shown that the energy separation between the sublevels of carriers in QDs decreases as the In content in the InGaAs matrix increases. More... »

PAGES

833-836

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1777610

DOI

http://dx.doi.org/10.1134/1.1777610

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1033802279


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