Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-07

AUTHORS

V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, T. P. Samsonova

ABSTRACT

It is shown that irradiation of Ni-SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni-SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal-semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons. More... »

PAGES

745-750

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1777593

DOI

http://dx.doi.org/10.1134/1.1777593

DIMENSIONS

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