High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-06

AUTHORS

M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, Zh. I. Alferov

ABSTRACT

Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C. More... »

PAGES

732-735

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1766381

DOI

http://dx.doi.org/10.1134/1.1766381

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041911429


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