Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-05

AUTHORS

V. A. Odnoblyudov, A. Yu. Egorov, M. M. Kulagina, N. A. Maleev, Yu. M. Shernyakov, E. V. Nikitina, V. M. Ustinov

ABSTRACT

The design of the active region in InGaAsN quantum well (QW) injection lasers is investigated. Long-wavelength (1.27–1.3 mm), low-threshold (<400 A/cm2), and high-efficiency (>50%) lasing is obtained at room temperature from structures based on single InGaAsN QWs in GaAs or InGaAsN barrier layers. The principal parameters (threshold, temperature, power) of these lasers have been studied in the wide-stripe configuration. The characteristics of injection lasers with different designs of the active region are compared. More... »

PAGES

607-609

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1755901

DOI

http://dx.doi.org/10.1134/1.1755901

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051630193


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