Carrier density profile in weakly coupled GaAs/AlGaAs superlattices View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2004-04

AUTHORS

P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, G. K. Rasulova

ABSTRACT

The effect of doping level on the current-voltage characteristics of semiconductor heterostructures with GaAs/AlGaAs superlattices was studied by the electrochemical capacitance-voltage profiling method. It was shown that a high density of free electrons in the GaAs/AlGaAs superlattice screens the external electric field and inhibits the formation of a domain with a high electric field that is responsible for resonant tunneling in weakly coupled superlatticest. More... »

PAGES

451-454

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/1.1734673

DOI

http://dx.doi.org/10.1134/1.1734673

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011191030


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